G. Erbert, G. Beister, R. Hülsewede, A. Knauer, W. Pittroff, J. Sebastian, H. Wenzel, M. Weyers, G. Tränkle

Published in:

IEEE J. Sel. Top. Quantum Electron., vol. 7, no. 2, pp. 143-148 (2001).

Abstract:

Al-free diode lasers emitting at 940 nm having a broadened step-index waveguide structure and a single active InGaAs quantum well have been realized by MOVPE. The impact of waveguide thickness on device performance has been studied. The highest wall plug efficiency of about 60% has been obtained with diode lasers having a 1-µm-thick waveguide. Increasing the waveguide thickness to 1.5 µm resulted in record low degradation rates below 10^-5 h^-1 for 3-W output power (100 µm stripe width). The same diode lasers showed a good long-term reliability even at an output power of 4 W. The best beam quality had diode lasers with a 2-µm-thick waveguide, at the expense of a reduced temperature stability.

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