A. Bhattacharya, M. Zorn, A. Oster, M. Nasarek, H. Wenzel, J. Sebastian, M. Weyers, G. Tränkle

Published in:

J. Cryst. Growth, vol. 221, pp. 663-667 (2000).

Abstract:

This paper reports on the optimization of the growth of visible-wavelength vertical-cavity surface emitting laser (VCSEL) diodes by metalorganic vapour-phase epitaxy (MOVPE). The VCSEL structure has an GaInP/AlGaInP quantum well active zone (AZ) sandwiched between AlGaAs/AlAs distributed Bragg reflectors (DBRs). We present results on the optimization of the DBR reflectivity and the electrical resistance of the p-DBR and discuss the switching sequence at the AZ to p-DBR interface which is critical due to the change of the group V component. Using these optimized parameters 640-655 nm emitting VCSELs could be demonstrated, with a minimum threshold current density of 2.8 kA/cm² at 654 nm.

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