C.N. Rheinfelder°, K.M. Strohm°, L. Metzger°, J.-F. Luy°, and W. Heinrich*

Published in:

1999 IEEE MTT-S Int. Microwave Symp. Digest, vol. 1, pp. 5-8 (1999).

Abstract:

A 47 GHz MMIC SiGe-HBT oscillator on highresistivity silicon is presented. An output power of 13.1 dBm and an efficiency of 13.6 % is measured. The oscillator exhibits a phase-noise of -99.31 dBc/Hz at 100 kHz off-carrier. These results represent a new record value for SiGe-HBT based oscillators.

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