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Hybrid integrated fibre-amplifier-antenna module for radio applications at 60 GHz
/forschung/publikationen/hybrid-integrated-fibre-amplifier-antenna-module-for-radio-applications-at-60-ghz
A 60 GHz transmit module comprising fibre input, high-gain MMIC amplifier, and planar antenna is presented. The novel coplanar packaging approach uses substrate-integrated subpackages, coplanar…
A SiGe-MMIC Oscillator at 47 GHz
/forschung/publikationen/a-sige-mmic-oscillator-at-47-ghz
A 47 GHz MMIC SiGe-HBT oscillator on highresistivity silicon is presented. An output power of 13.1 dBm and an efficiency of 13.6 % is measured. The oscillator exhibits a phase-noise of -99.31 dBc/Hz…
Correlation of InGaP(001) surface structure during growth and bulk ordering
/forschung/publikationen/correlation-of-ingap001-surface-structure-during-growth-and-bulk-ordering
CuPtB-type ordering of InGaP grown lattice matched to GaAs was investigated by in situ reflectance anisotropy spectroscopy and reflection high-energy electron diffraction. The experiments have been…
Publikationen
/forschung/publikationen/in-situ-characterization-of-strain-distribution-in-broad-area-high-power-lasers-under-operation-by-high-resolution-x-ray-diffraction-and-topography-using-synchrotron-radiation
Publikationen
/forschung/publikationen/assessment-of-layer-structures-for-gainpgaas-heterojunction-bipolar-transistors
Gain Spectra Measurement of Strained and Strain-Compensated InGaAsP/AlGaAs Laser Structures for λ = 800 nm
/forschung/publikationen/gain-spectra-measurement-of-strained-and-strain-compensated-ingaaspalgaas-laser-structures-for-lnbspnbsp800nbspnm
InGaAsP single quantum wells (QW's) for wavelengths around 800 nm embedded in AlGaAs large optical-cavity waveguide structures are investigated by measuring modal gain spectra and broad-area…
Publikationen
/forschung/publikationen/gain-spectra-measurement-of-strained-ingaasp-gaasp-algaas-single-and-double-quantum-well-laser-structures-for-wavelength-near-800nbspnm
Publikationen
/forschung/publikationen/deep-electronic-states-near-the-surface-of-ingap-layers-grown-by-movpe-on-gaas
7 W CW power from tensile-strained GaAsyP1-y/AlGaAs (λ = 735 nm) QW diode lasers
/forschung/publikationen/7nbspw-cw-power-from-tensile-strained-gaasyp1-yalgaas-lnbspnbsp735nbspnm-qw-diode-lasers
100 µm-stripe lasers with a tensile-strained GaAsyP1-y quantum well embedded in a low-loss AlGaAs large-optical-cavity structure provide a record-high CW power of 7 W at 735 nm from 2mm-long devices.…