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7 W CW power from tensile-strained GaAsyP1-y/AlGaAs (λ = 735 nm) QW diode lasers

A. Knauer, F. Bugge, J. Maege, W. Pittroff and J. Sebastian

Published in:

Electron. Lett., vol. 35, no. 8, pp. 638-639 (1999).

Abstract:

100 µm-stripe lasers with a tensile-strained GaAsyP1-y quantum well embedded in a low-loss AlGaAs large-optical-cavity structure provide a record-high CW power of 7 W at 735 nm from 2mm-long devices. The transverse beam pattern has a narrow 25° beamwidth. Reliability tests at the 0.5W CW power level suggest lifetimes > 104h.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany

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