AlGaN-based Ultraviolet Lasers - Applications and Materials Challenges
M. Kneissl1,2, T. Kolbe1, J. Schlegel1, J. Stellmach1, C.L. Chua3, Z. Yang1, A. Knauer2, V. Kueller2, M. Weyers2, and N. Johnson1
Published in:
Conf. on Lasers and Electro-Optics (CLEO 2011), Baltimore, USA, May 01-06, paper JTuB1 (2011).
Abstract:
Recent progress in the development of ultraviolet laser diodes will be reviewed. The effect of the heterostructure design on the gain characteristics as well as epitaxial growth challenges for AlGaN-based UV lasers will be discussed.
1 Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
3 Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA
OCIS Codes:
(250.5960) Optoelectronics : Semiconductor lasers; (250.5590) Optoelectronics : Quantum-well, -wire and -dot devices
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