F. Bugge^a, A. Mogilatenko^b, U. Zeimer^a, O. Brox^a, W. Neumann^b, G. Erbert^a, M. Weyers^a

Published in:

J. Cryst. Growth, vol. 315, no. 1, pp. 74-77 (2011).

Abstract:

We have studied the MOVPE regrowth of AlGaAs over a grating for GaAs-based laser diodes with an internal wavelength stabilisation. Growth temperature and aluminium concentration in the regrown layers considerably affect the oxygen incorporation. Structural characterisation by transmission electron microscopy of the grating after regrowth shows the formation of quaternary InGaAsP regions due to the diffusion of indium atoms from the top InGaP layer and As-P exchange processes during the heating-up procedure. Additionally, the growth over such gratings with different facets leads to self- organisation of the aluminium content in the regrown AlGaAs layer, resulting in an additional AlGaAs grating, which has to be taken into account for the estimation of the coupling coefficient.
With optimized growth conditions complete distributed feedback laser structures have been grown for different emission wavelengths. At 1062 nm avery high single-frequency output power of nearly 400 mW with a slope efficiency of 0.95 W/A for a 4 mm ridge-waveguide was obtained.

Keywords:

A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Laserdiodes

© 2011 Elsevier B.V. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Elsevier B.V.

Full version in pdf-format.