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Microstructure analysis of novel ternary NiSi2-xAlx silicide layers on Si(001) formed by solid-state reaction

A. Mogilatenko1,2, G. Beddies3, M. Falke4, I. Häusler1, and W. Neumann1

Published in:

J. Appl. Phys., vol. 111, no. 103512 (2012).

Abstract:

Phase formation due to annealing of Al/Ni (z:1) films on Si was investigated on the nanometer scale as a function of Al content and annealing temperature. An addition of Al to the Ni-Si system followed by annealing at 500 °C results in the formation of different Ni-Al-Si compounds depending on the Al content. Furthermore, a reduction of disilicide formation temperature from 700 °C down to 500 °C was observed in the presence of Al. In particular, grains of ternary NiSi2-xAlx were observed at the NiSi/Si interface after the 500 °C annealing even for a small Al amount of z=0.1. A 900 °C annealing leads to the formation of continuous NiSi2-xAlx layers. The interfacial roughness of the layers strongly depends on the Al content and reaches its minimum for an Al fraction (z) ranging from 0.2 to 0.4. Using results of transmission electron microscopy analysis, a model describing the formation of ternary NiSi2-xAlx is proposed.

1 Institute of Physics, Humboldt University of Berlin, Newtonstr. 15, 12489 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
3 Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
4 Bruker AXS Microanalysis GmbH, Schwarzschildstrasse 12, 12489 Berlin, Germany

Keywords:

annealing, interface roughness, nickel compounds, thin films, transmission electron microscopy

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