P. Crump, O. Brox, F. Bugge, J. Fricke, C. Schultz, M. Spreemann, B. Sumpf, H. Wenzel, and G. Erbert

Published in:

James J Coleman, A. Catrina Bryce, Chennupati Jagadish, editors: Semiconductors and Semimetals, vol. 86, SEMSEM, Advances in Semiconductor Lasers, Burlington, UK: Academic Press, ISBN-13: 978-0-12-391066-0, pp. 49-91 (2012).

Abstract:

GaAs-based edge-emitting diode lasers in the 600-1100 nm range efficiently deliver high-optical powers with long lifetimes and are in wide commercial use. However, if no special measures are taken, the spectral width is too large (4-5 nm, with 95% power content) for use in many applications. In recent years, technological and design advances have enabled monolithic devices to deliver > 1 W optical output power with spectral widths of < 1 nm. We present here a review of these developments and the technology they are based upon. The technological elements discussed include techniques for patterning gratings across large areas and methods for their implementation in full laser structures, including surface gratings and epitaxially overgrown gratings. The necessary simulation techniques and design processes are also reviewed. Finally, the performance achieved to date is presented, to include high-power laterally single- and multiple-mode structures, tapered lasers, and novel edge-emitting resonators.

Keywords:

Diode lasers; Distributed Bragg reflector; Distributed feedback grating; Edge-emitting laser; GaAs diode laser; High efficiency; High power; Narrow spectral width

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