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Patente

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

E. Bahat-Treidel, O. Hilt, R. Zhytnytska, A. Wentzel, C. Meliani, J. Würfl, and G. Tränkle

Published in:

IEEE Electron Device Lett., vol. 33, no. 3, pp. 357-359 (2012).

Abstract:

GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on n-SiC substrate are investigated in this letter. These SBDs own very low onset voltage VF = 0.43 V, high reverse blocking VBR > 1000 V, very low capacitive charge of 0.213 nC/A, and a very fast recovery time of 10 ps. These unique qualities are achieved by combining lateral topology, GaN:C back-barrier epitaxial structure, fully recessed Schottky anode (ΦB = 0.43 eV), and slanted anode field plate in a robust and innovative process. Diode operation at elevated temperature up to 200 °C was also characterized.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Index Terms:

AlGaN/GaN Schottky diode, lateral Schottky diode, recessed Schottky diode.

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