P. Kotara, R. Zhytnytska, O. Hilt, E. Cho, F. Brunner, A. Thies, E. Bahat-Treidel, and J. Würfl

Published in:

ECS J. Solid State Sci. Technol., vol. 2 no. 8, pp. N3064-N3067 (2013).

Abstract:

To overcome the use of expensive semi-insulating SiC substrates, we developed a method to increase the vertical blocking strength of n-SiC by argon implantation prior to the high temperature epitaxial growth (1150°C) of the (Al)GaN layers. We superimpose 4 argon implantation energies (30 keV + 60 keV + 180 keV + 360 keV) to a total maximal concentration of 1 · 10¹⁸ atoms/cm³ and observed a 90 V - 100 V increase of the vertical blocking strength by this method. Implantation profile and dose dependencies are studied showing that the results could be related to an increased substrate resistance achieved by implantation. HRXRD analysis shows that the defect density in the GaN buffer is not increased by substrate implantation.

Copyright © 2013 by ECS -- The Electrochemical Society. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the ECS.

Full version in pdf-format.