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BCB encapsulation for high power AlGaN/GaN-HFET technology
/forschung/publikationen/bcb-encapsulation-for-high-power-algangan-hfet-technology
GaN-HEMT technology with BCB encapsulation was successfully established without compromises in DC and RF performance. It was shown that same power levels of 6 W/mm and high efficiencies higher…
Formation of Slanted Gates for GaN-Based HEMTs by Combined Plasma and Wet Chemical Etching of Silicon Nitride
/forschung/publikationen/formation-of-slanted-gates-for-gan-based-hemts-by-combined-plasma-and-wet-chemical-etching-of-silicon-nitride
We propose a new method for the formation of slanted gates for GaN-based HEMTS that consists of the combination of an anisotropic plasma and an isotropic wet chemical etch step. By combining these…
Fabrication technology of GaN/AlGaN HEMT slanted sidewall gates using thermally reflowed ZEP resist and CHF3/SF6 plasma etching
/forschung/publikationen/fabrication-technology-of-ganalgan-hemt-slanted-sidewall-gates-using-thermally-reflowed-zep-resist-and-chf3sf6-plasma-etching
In this work we present a technology of slanted sidewall gate fabrication using ICP etching of the SiNx passivation layer with a thermally reflowed ZEP 520A electron beam resist as etch mask. The…
Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric
/forschung/publikationen/gallium-nitride-mis-hemt-using-atomic-layer-deposited-al2o3-as-gate-dielectric
Metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) were fabricated with an AlGaN/GaN heterostructure. The ALD-deposited Al2O3 layer served as gate dielectric under the gate…
Optimization of GaN wafer bow grown on cone shaped patterned sapphire substrates
/forschung/publikationen/optimization-of-gan-wafer-bow-grown-on-cone-shaped-patterned-sapphire-substrates
Strain evolution in GaN layers grown on flat (FSS) and cone shaped patterned sapphire substrates (CPSS) is studied by in-situ reflectance and curvature measurements. Intrinsic growth strain and…
Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications
/forschung/publikationen/highly-reliable-silicon-carbide-photodiodes-for-visible-blind-ultraviolet-detector-applications
Highly efficient polytype 4H silicon carbide (4H-SiC) p−n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up…
How does external feedback cause AlGaAs-based diode lasers to degrade?
/forschung/publikationen/how-does-external-feedback-cause-algaas-based-diode-lasers-to-degrade
The effect of external feedback on the degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is studied. For this purpose, early stages of gradual degradation are…
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays
/forschung/publikationen/effective-thermal-management-in-ultraviolet-light-emitting-diodes-with-micro-led-arrays
We report on the use of micro-LED arrays, consisting of a matrix of interconnected micrometer-size light-emitting diodes (LEDs), to ensure uniform current injection, reduced series resistance, and…
Thermal Coupling in AlGaN/GaN Power Transistors
/forschung/publikationen/thermal-coupling-in-algangan-power-transistors
Thermal coupling in AlGaN/GaN transistors is investigated by means of thermal FEM (finite element method) simulation. The results are combined with electrical network simulation using an…
17-W Near-Diffraction-Limited 970-nm Output From a Tapered Semiconductor Optical Amplifier
/forschung/publikationen/17-w-near-diffraction-limited-970-nm-output-from-a-tapered-semiconductor-optical-amplifier
High power, high beam quality and narrow, stable spectra are achieved simultaneously using a truncated-tapered optical amplifier in a master-oscillator power amplifier-system. We compare the…