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Linear thermal expansion coefficient determination using in situ curvature and temperature dependent X-ray diffraction measurements applied to metalorganic vapor phase epitaxy-grown AlGaAs
/forschung/publikationen/linear-thermal-expansion-coefficient-determination-using-in-situ-curvature-and-temperature-dependent-x-ray-diffraction-measurements-applied-to-metalorganic-vapor-phase-epitaxy-grown-algaas
AlxGa1-xAs grown on GaAs is known to be almost perfectly lattice matched with a maximum lattice mismatch of 0.14% at room temperature and even less at temperatures of 700°C-800°C. However, as layer…
Improved injection efficiency in 290nm light emitting diodes with Al(Ga)N electron blocking heterostructure
/forschung/publikationen/improved-injection-efficiency-in-290nm-light-emitting-diodes-with-algan-electron-blocking-heterostructure
The effect of different Al(Ga)N electron blocking heterostructures (EBH) on the emission spectra and light output power of 290 nm light emitting diodes (LEDs) has been investigated. The carrier…
High peak power pulses from dispersion optimised modelocked semiconductor laser
/forschung/publikationen/high-peak-power-pulses-from-dispersion-optimised-modelocked-semiconductor-laser
Presented is an electrically pumped passively modelocked edge-emitting semiconductor laser system in an external cavity setup with intracavity dispersion management. This concept, in combination with…
Leistungsstarke Femtosekunden-Diodenlasersysteme
/forschung/publikationen/leistungsstarke-femtosekunden-diodenlasersysteme
Die Femtosekunden-Lasertechnologie verspricht viele interessante Anwendungen von der Grundlagenforschung über die Messtechnik bis zur Materialbearbeitung. Während bei den konventionellen…
Phase control of semi-polar (1120) GaN on cone shaped r-plane patterned sapphire substrates
/forschung/publikationen/phase-control-of-semi-polar-1122-and-non-polar-1120-gan-on-cone-shaped-r-plane-patterned-sapphire-substrates
The control of formation of semi-polar (1122) and nonpolar a-plane (1120) GaN phases on r-plane cone shaped patterned sapphire substrates (CPSS) by metalorganic vapor-phase epitaxy has been…
Characterization of semiconductor devices and wafer materials via sub-nanosecond time-correlated single-photon counting
/forschung/publikationen/characterization-of-semiconductor-devices-and-wafer-materials-via-sub-nanosecond-time-correlated-single-photon-counting
Time-correlated single-photon counting (TCSPC) of semiconductor photoluminescence is presented as a versatile technique for addressing diverse aspects of charge carrier dynamics on a pico- to…
Epitaxial-Side Mounting of Terahertz Quantum-Cascade Lasers for Improved Heat Management
/forschung/publikationen/epitaxial-side-mounting-of-terahertz-quantum-cascade-lasers-for-improved-heat-management
First results on epitaxial-side (epi-down) mounting of terahertz quantum-cascade lasers (QCLs) on sapphire submounts using indium solder are presented. The single-plasmon ridge waveguide lasers emit…
Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes
/forschung/publikationen/index-antiguiding-in-narrow-ridge-waveguide-inalgan-based-laser-diodes
The threshold current density of narrow (1.5 µm) ridge waveguide (In,Al)GaN based laser diodes is found to strongly depend on the ridge etch depth. By solving the complex-value two-dimensional…
Monolithic 626 nm single-mode AlGaInP DBR diode laser
/forschung/publikationen/monolithic-626-nm-single-mode-algainp-dbr-diode-laser
Single-mode lasers below 630 nm are still realized using complex laser systems. We present distributed Bragg reflector (DBR) ridge waveguide lasers (RWL) based on AlGaInP. When packaged into sealed…
InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process
/forschung/publikationen/inp-si-bicmos-heterointegration-using-a-substrate-transfer-process
Broadband transmitters for radio links in the mm-wave range are key building blocks for future wireless communication systems. In this work such components are to be realized by means of an InPon-…