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Fine-tuning of whispering gallery modes in on-chip silica microdisk resonators within a full spectral range
/forschung/publikationen/fine-tuning-of-whispering-gallery-modes-in-on-chip-silica-microdisk-resonators-within-a-full-spectral-range
We investigate an efficient method for fine-tuning whispering gallery mode resonances in disk-type silica microresonators to reach an arbitrary frequency within the free spectral range of the system.…
Low-cost eWLB packaging for automotive radar MMICs in the 76-81 GHz range
/forschung/publikationen/low-cost-ewlb-packaging-for-automotive-radar-mmics-in-the-76-81-ghz-range
Embedded wafer-level ball grid array (eWLB) is investigated as a low-cost plastic package for automotive radar applications in the 76-81 GHz range. Low transmission losses from chip to package and…
Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization
/forschung/publikationen/y-branch-coupled-dfb-lasers-based-on-high-order-bragg-gratings-for-wavelength-stabilization
Y-branch coupled distributed-feedback lasers with 40th- and 80th-order surface Bragg gratings have been fabricated using a process based on I-line wafer stepper lithography. The devices allow dual…
Fast GaN based Schottky diodes on Si(111) substrate with low onset voltage and strong reverse blocking
/forschung/publikationen/fast-gan-based-schottky-diodes-on-si111-substrate-with-low-onset-voltage-and-strong-reverse-blocking
GaN-based heterostructure lateral Schottky barrier diodes (SBD) grown on Si(111) substrate are presented in this work. These SBDs own very low onset-voltage, VF = 0.50 V, high reverse…
Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions
/forschung/publikationen/dynamics-of-a-gain-switched-distributed-feedback-ridge-waveguide-laser-in-nanoseconds-time-scale-under-very-high-current-injection-conditions
We present detailed experimental investigations of the temporal, spectral and spatial behavior of a gain-switched distributed feedback (DFB) laser emitting at a wavelength of 1064 nm.…
Development of narrow linewidth, micro-integrated extended cavity diode lasers for quantum optics experiments in space
/forschung/publikationen/development-of-narrow-linewidth-micro-integrated-extended-cavity-diode-lasers-for-quantum-optics-experiments-in-space
We present a micro-integrated extended cavity diode laser module for experiments on rubidium Bose-Einstein condensates and atom interferometry at 780.24 nm onboard a sounding rocket. The…
AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates
/forschung/publikationen/algan-layer-structures-for-deep-uv-emitters-on-laterally-overgrown-alnsapphire-templates
The crystalline perfection of n-type AlxGa1-xN layers with Al content higher than x>0.4 on epitaxial laterally overgrown AlN was investigated by high resolution X-ray diffraction,…
Controlled coalescence of MOVPE grown AlN during lateral overgrowth
/forschung/publikationen/controlled-coalescence-of-movpe-grown-aln-during-lateral-overgrowth
The substrate miscut orientation of c-plane sapphire has an impact on the lateral growth and coalescence of AlN during epitaxial lateral overgrowth of patterned AlN/sapphire templates. A faster and…
Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates
/forschung/publikationen/impact-of-aln-nucleation-layer-on-strain-in-gan-grown-on-4h-sic-substrates
The impact of AlN nucleation layers on the strain evolution in a subsequent GaN layer was investigated by in-situ wafer curvature measurement. It is shown that growth temperature and thickness of the…
Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy
/forschung/publikationen/predominant-growth-of-non-polar-a-plane-algan-on-patterned-c-plane-sapphire-by-hydride-vapor-phase-epitaxy
We report for the first time on predominant growth of non-polar a-plane (Al,Ga)N layers on patterned c-plane AlN/sapphire templates with ridges oriented along the [1100]Al2O3 direction. The layers…