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Structural and optical properties of semipolar (1122) AlGaN grown on (1010) sapphire by metal-organic vapor phase epitaxy
/forschung/publikationen/structural-and-optical-properties-of-semipolar-1122-algan-grown-on-1010-sapphire-by-metal-organic-vapor-phase-epitaxy
We report on the growth of semipolar (1122) AlGaN in the entire composition range on (1010) sapphire by metal-organic vapor phase epitaxy. Growth rates increase linearly with the metal-organic supply…
Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates
/forschung/publikationen/improved-vertical-isolation-for-normally-off-high-voltage-gan-hfets-on-n-sic-substrates
Argon implantation of n-type SiC substrates prior to epitaxial growth of AlGaN/GaN HFETs stacks is used to decrease the vertical leakage to the conductive substrate. Normally-off p-GaN gate…
High Brightness, Narrow Bandwidth DBR Diode Lasers at 1120 nm
/forschung/publikationen/high-brightness-narrow-bandwidth-dbr-diode-lasers-at-1120nbspnm
In this letter, we report on monolithic distributed Bragg reflector ridge waveguide diode lasers. The lasers feature highly strained InGaAs quantum wells and fifth order surface gratings for a…
High-Efficiency Low-Voltage 24GHz VCO in 130nm CMOS for FMCW Radar Applications
/forschung/publikationen/high-efficiency-low-voltage-24ghz-vco-in-130nm-cmos-for-fmcw-radar-applications
A high-efficiency CMOS voltage controlled oscillator (VCO) with cross-coupled topology in 130nm IBMCMOS process is presented. The VCO delivers 4dBm output power, with 13% tuning range. It offers both…
Enabling GaN High Speed Devices: Microwave Meets Power Electronics - and vice versa
/forschung/publikationen/enabling-gan-high-speed-devices-microwave-meets-power-electronics-and-vice-versa
GaN devices are getting highly mature in the field of microwave electronics covering power applications at frequencies ranging from a few 100 MHz to almost 100 GHz. This success is due to…
Bow-Tie-Antenna-Coupled Terahertz Detectors using AlGaN/GaN Field-Effect Transistors with 0.25 Micrometer Gate Length
/forschung/publikationen/bow-tie-antenna-coupled-terahertz-detectors-using-algangan-field-effect-transistors-with-025-micrometer-gate-length
We report on the design and characterization of terahertz detection devices using field-effect transistors and on-chip broadband antennas. Experimental results from measurements on…
A 164 GHz Hetero-Integrated Source in InP-on-BiCMOS Technology
/forschung/publikationen/a-164-ghz-hetero-integrated-source-in-inp-on-bicmos-technology
A 164 GHz source in a hetero-integrated semiconductor technology is presented. It features a fundamental frequency voltage-controlled oscillator in BiCMOS, which is used to drive a…
Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications
/forschung/publikationen/modeling-of-inp-hbts-in-transferred-substrate-technology-for-millimeter-wave-applications
In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to…
Design of 200 W Wideband Doherty Amplifier with 34 % Bandwidth
/forschung/publikationen/design-of-200-w-wideband-doherty-amplifier-with-34-bandwidth
This paper presents the design and implementation of a 200 W wideband harmonically-tuned Doherty amplifier. The power amplifier (PA) is targeted for wide range base stations operating within the…
Parasitic Effects and Measurement Uncertainties in Multi-Layer Thin-Film Structures
/forschung/publikationen/parasitic-effects-and-measurement-uncertainties-in-multi-layer-thin-film-structures
On-wafer measurements of multi-layer thin-film components in the mm-wave frequency range may involve uncertainties and parasitic effects due to adjacent structures on the wafer. Starting from a…