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Single Image Spectral Electroluminescence (Photon Emission) of GaN HEMTs
/forschung/publikationen/single-image-spectral-electroluminescence-photon-emission-of-gan-hemts
Continuous spectra of GaN HEMT photon emission were detected with prism-based optical path. Full spectra are obtained with single emission images by expansion of the emission spot to a spectral tail.…
Technological approaches towards high voltage, fast switching GaN power transistors
/forschung/publikationen/technological-approaches-towards-high-voltage-fast-switching-gan-power-transistors
Approaches towards fast switching GaN devices for applications in power electronics are discussed. First, an overview on the most prominent techniques towards increased breakdown voltage will be…
An inductively coupled miniature plasma jet source at microwave frequencies
/forschung/publikationen/an-inductively-coupled-miniature-plasma-jet-source-at-microwave-frequencies
A miniature double plasma jet source driven at microwave frequencies (∼2.45 GHz) was developed and analyzed. The source consists of a copper resonator (screened within an aluminum housing) that…
Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal-Semiconductor-Metal Photodetectors
/forschung/publikationen/influence-of-carrier-lifetime-transit-time-and-operation-voltages-on-the-photoresponse-of-visible-blind-algan-metal-semiconductor-metal-photodetectors
We investigated the influence of lifetime and transit time of photogenerated carriers on the performance of visible-blind Al0.25Ga0.75N metal-semiconductor-metal photodetectors by a combination of…
High quality AlGaN grown on ELOAlN/sapphire templates
/forschung/publikationen/high-quality-algan-grown-on-elo-alnsapphire-templates
The defect structure and the homogeneity of 1-3 µm thick AlxGa1-xN layers grown on epitaxially laterally overgrown (ELO) AlN on patterned AlN/sapphire templates have been investigated in…
Improving Raman spectroscopy with miniaturized diode lasers
/forschung/publikationen/improving-raman-spectroscopy-with-miniaturized-diode-lasers
Portable, microbench light sources based on diode lasers emitting at two wavelengths improve the ratio of signal-to-background noise for chemical analysis without wavelength calibration.
Dual-wavelength monolithic Y-branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy
/forschung/publikationen/dual-wavelength-monolithic-y-branch-distributed-bragg-reflection-diode-laser-at-671-nm-suitable-for-shifted-excitation-raman-difference-spectroscopy
A dual-wavelength monolithic Y-branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one-step epitaxy. A…
Stress evolution during AlxGa1-xN/AlN growth on sapphire
/forschung/publikationen/stress-evolution-during-alxga1-xnaln-growth-on-sapphire
In-situ curvature measurements were employed to analyse stress generation and relaxation during epitaxial growth of undoped and Si-doped AlGaN layers on AlN/sapphire templates. While AlGaN films with…
Basic Aspects of High-Power Semiconductor Laser Simulation
/forschung/publikationen/basic-aspects-of-high-power-semiconductor-laser-simulation
The aim of this paper is to review some of the models and solution techniques used in the simulation of high-power semiconductor lasers and to address open questions. We discuss some of the…
Efficient High-Power Laser Diodes
/forschung/publikationen/efficient-high-power-laser-diodes
High-power broad-area diode lasers are the most efficient light sources, with 90-µm stripe GaAs-based 940-980 nm single emitters delivering > 10 W optical output at a power…