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Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements
/forschung/publikationen/unraveling-carrier-distribution-in-far-uvc-leds-by-temperature-dependent-electroluminescence-measurements
The hole transport and the carrier distribution in AlGaN-based far-ultraviolett (UVC) light emitting diodes (LEDs) emitting around 233 nm was investigated. Temperature-dependent…
Academic Collaboration to Advance Ultrahigh-Power Applications
/media-center/medienschau/academic-collaboration-to-advance-ultrahigh-power-applications
The Ferdinand-Braun-Institut (FBH) and the University of Glasgow are deepening their existing collaboration in ultrahigh-power photonic applications and academic exchange programs.
Thermal stability of Pd/Zn and Pt based contacts to p- In0.53Ga0.47AsInP with various barrier layers
/forschung/publikationen/thermal-stability-of-pdzn-and-pt-based-contacts-to-p-in053ga047asinp-with-various-barrier-layers
Pd/Zn/Au contacts to p- In0.53Ga0.47AsInP with various types of barrier layers to the indiffusion of Au have been examined by Rutherford backscattering spectrometry (RBS). For the metallizations…
Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (λ = 1020 nm) ridge waveguide laser diodes
/forschung/publikationen/monomode-emission-at-350-mw-and-high-reliability-with-ingaasalgaas-l-1020-nm-ridge-waveguide-laser-diodes
3.35 mm long InGAs/GaAs/AlGaAs ridge waveguide lasers emitting at 1020 nm showed monomode emission up to 350 mW. By widening the emission near field and protecting the facets with…
Reliable high-power InGaAs/AlGaAs ridge waveguide laser diodes
/forschung/publikationen/reliable-high-power-ingaasalgaas-ridge-waveguide-laser-diodes
In application of RW laser diodes with monomode emission, like pumping sources for fibre amplifiers in optical communication systems, very high output powers are desirable. During the last years,…
Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
/forschung/publikationen/real-time-monitoring-of-movpe-device-growth-by-reflectance-anisotropy-spectroscopy-and-related-optical-techniques
Reflectance anisotropy spectroscopy (RAS/RDS) so far has been mostly used for basic growth studies in both molecular beam epitaxy (MBE) and metal-organic vapor-phase epitaxy (MOVPE). Due to its…
Growth monitoring of GaInP/GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopy
/forschung/publikationen/growth-monitoring-of-gainpgaas-heterojunction-bipolar-transistors-by-reflectance-anisotropy-spectroscopy
Reflectance anisotropy spectroscopy (RAS) was applied as in situ probe during the growth of GaInP/GaAs heterojunction bipolar transistors (HBT) under production conditions, i.e. wafer rotation. The…
Photonics: Strengthening UK-German collaboration
/media-center/medienschau/photonics-strengthening-uk-german-collaboration
Pushing the limits of high-power diode lasers! This is just one of the ambitious goals of the cooperation between the Ferdinand-Braun-Institut (FBH), Berlin, Germany and the University of Glasgow,…
FBH baut deutsch-britische Zusammenarbeit in der Hochleistungs-Photonik aus
/media-center/medienschau/fbh-baut-deutsch-britische-zusammenarbeit-in-der-hochleistungs-photonik-aus
Das Berliner Ferdinand-Braun-Institut (FBH) und die University of Glasgow intensivieren ihre Zusammenarbeit mit einem Schwerpunkt auf Anwendungen der Ultra-Hochleistungsphotonik. Ein besonderer Fokus…
ESLW 2024
/termine/eslw-2024
Das FBH präsentiert neueste Forschungsergebnisse beim European Semiconductor Laser Workshop.