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Long wavelength, small quantum interferometer module: shrinking MIR OCT systems via quantum entanglement
/forschung/publikationen/long-wavelength-small-quantum-interferometer-module-shrinking-mir-oct-systems-via-quantum-entanglement
Long wavelength, small quantum interferometer module: shrinking MIR OCT systems via quantum entanglement G. Blumea, D. Feisea, A. Sahma, P. Hildensteina, N. Wernera,…
Wavelength tunable tapered diode lasers at 1180 nm with high spectral radiance
/forschung/publikationen/wavelength-tunable-tapered-diode-lasers-at-1180-nm-with-high-spectral-radiance
Wavelength tunable tapered diode lasers at 1180 nm with high spectral radiance K. Paschke, N. Werner, S.-A. Seeger, D. Feise, P. Della Casa, R.-St. Unger,…
High-power semiconductor laser systems at 720nm: tailored laser light delivery for quantum technologies
/forschung/publikationen/high-power-semiconductor-laser-systems-at-720nm-tailored-laser-light-delivery-for-quantum-technologies
High-power semiconductor laser systems at 720nm: tailored laser light delivery for quantum technologies N. Wernera, S.-A. Seegera, F. Mauerhoffa, P. Hildensteina,…
Miniaturized wavelength stabilized laser module emitting at 619nm
/forschung/publikationen/miniaturized-wavelength-stabilized-laser-module-emitting-at-619nm
Miniaturized wavelength stabilized laser module emitting at 619nm F. Mauerhoffa, O. Senela, D. Feisea, A. Sahma, T. Schrödera, K. Paschkea …
Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes
/forschung/publikationen/vertical-gan-on-tungsten-high-voltage-pn-diodes-from-sapphire-grown-gan-membranes
In this work, we demonstrate vertical GaN pn-diodes for high voltage applications initially grown and processed on 4" sapphire substrates and then trans- ferred to 4" tungsten substrates to achieve a…
Experimental studies of GaAs-based broad area diode lasers using highly asymmetric epitaxial structures with high modal gain: finding a path to exceeding 80% conversion efficiency at 25°C
/forschung/publikationen/experimental-studies-of-gaas-based-broad-area-diode-lasers-using-highly-asymmetric-epitaxial-structures-with-high-modal-gain-finding-a-path-to-exceeding-80-conversion-efficiency-at-25c
Experimental studies of GaAs-based broad area diode lasers using highly asymmetric epitaxial structures with high modal gain: finding a path to exceeding 80% conversion efficiency at…
Design study on large-area all-semiconductor PCSELs
/forschung/publikationen/design-study-on-large-area-all-semiconductor-pcsels
Design study on large-area all-semiconductor PCSELs B. King1, H. Wenzel1, E. Kuhn2, M. Radziunas2, and P. Crump1 1 Ferdinand-Braun-Institut (FBH),…
Compact 1 kW diode laser process head emitting at 780 nm for the efficient direct additive manufacturing of aluminum
/forschung/publikationen/compact-1-kw-diode-laser-process-head-emitting-at-780-nm-for-the-efficient-direct-additive-manufacturing-of-aluminum
Compact 1 kW diode laser process head emitting at 780 nm for the efficient direct additive manufacturing of aluminum M. Hübnera, S. Arslana, L. Wittenbechera, J. Zendera,…
Monolithic DBR broad-area diode lasers with high conversion efficiency in the 87x–88xnm wavelength range
/forschung/publikationen/monolithic-dbr-broad-area-diode-lasers-with-high-conversion-efficiency-in-the-87x-88xnm-wavelength-range
Monolithic DBR broad-area diode lasers with high conversion efficiency in the 87x–88xnm wavelength range M. Elattara, H. Wenzela, J. Frickea, P. Della Casaa,…
Performance scaling of high-power diode laser pumps for fusion applications
/forschung/publikationen/performance-scaling-of-high-power-diode-laser-pumps-for-fusion-applications
Performance scaling of high-power diode laser pumps for fusion applications P. Crumpa and W.E. Fenwickb a Ferdinand-Braun Institut (FBH), 12489 Berlin, Germany b Lawrence…