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Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage
/forschung/publikationen/epitaxy-of-7-mm-thick-gan-drift-layers-on-150-mm-si111-substrates-realizing-vertical-pn-diodes-with-1200-v-breakdown-voltage
Metal-organic chemical vapor deposition growth of vertical GaN PN structures on 6" Si(111) substrates enabling a 1200 V breakdown voltage is demonstrated. Thanks to an optimized buffer structure…
The influence of experimental imperfections on photonic GHZ state generation
/forschung/publikationen/the-influence-of-experimental-imperfections-on-photonic-ghz-state-generation
While the advantages of photonic quantum computing, including direct compatibility with communication, are apparent, several imperfections such as loss and distinguishability presently limit actual…
K/Ka-Band–GaN–High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance
/forschung/publikationen/kka-band-gan-high-electron-mobility-transistors-technology-with-700-ms-mm-1-extrinsic-transconductance
In this study, the impacts of fabrication technology and epitaxial layer design on the transconductance (gm) of radio frequency AlGaN/GaN high-electron-mobility transistors (HEMTs) are examined.…
Kontakt
/kontakt
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-Str. 4 12489 Berlin Tel. +49 30 63922600 Fax +49 30 63922602 E-Mail fbh@fbh-berlin.de Ihr Weg zu…
Anreise
/kontakt/anreise
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-Str. 4 12489 Berlin Mit dem Flugzeug – vom Flughafen BER Bus 164 (Richtung S Köpenick)…
Dissertationen
/publikationen/dissertationen
Philipp Hildenstein Application of thermo-optic beam control in GaAs-based edge emitters Zugl.: Dissertation Technische Universität Berlin, 2025. Anisuzzaman Boni Efficiency optimization of…
Solid-Solution Limits and Thorough Characterization of Bulk β-(AlxGa1-x)2O Single Crystals Grown by the Czochralski Method
/forschung/publikationen/solid-solution-limits-and-thorough-characterization-of-bulk-beta-alxga1-x2o-single-crystals-grown-by-the-czochralski-method
With comprehensive crystal growth experiments of β-(AlxGa1-x)2O3 by the Czochralski method this work concludes a maximum [Al] = 40 mol% (35 mol% in the melt) that can be…
AlGaN/AlN heterostructures: an emerging platform for integrated photonics
/forschung/publikationen/alganaln-heterostructures-an-emerging-platform-for-integrated-photonics
We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfigurable and on-chip…
Towards an EPR on a Chip Spectrometer for Monitoring Radiation Damage During X‑ray Absorption Spectroscopy
/forschung/publikationen/towards-an-epr-on-a-chip-spectrometer-for-monitoring-radiation-damage-during-x-ray-absorption-spectroscopy
Electron paramagnetic resonance (EPR) spectroscopy is an essential tool to investigate the effects of ionizing radiation, which is routinely administered for reducing contaminations and waste in food…
Characteristics and Operation of a Monolithic Bidirectional GaN-on-AlN/SiC Power Transistor Employing Dual-Gate
/forschung/publikationen/characteristics-and-operation-of-a-monolithic-bidirectional-gan-on-alnsic-power-transistor-employing-dual-gate
We demonstrate a novel 650 V/110 mΩ monolithic bidirectional GaN-on-AlN/SiC switch with two Schottky-type gates, which shows back-gating immunity and thus enables straightforward on-chip…