High Yield, Highly Scalable, High Voltage GaInP/GaAs HBT Technology
P. Kurpas, B. Janke, A. Wentzel, H. Weiss*, L. Schmidt*, C. Rheinfelder*, R. Pazirandeh, A. Maaßdorf, L. Schellhase, W. Heinrich, J. Würfl
Published in:
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2008), Chicago, IL, Apr. 14-17, pp. 115-118 (2008).
Abstract:
Based on a power high-voltage (HV) HBT technology the successful down scaling towards low-power devices for mixed signal integrated circuits is described. Stress effects and mechanical stability issues required processing adaptations. High yields of 99.8 % for 3x30 µm2 and 99.0 % for 2x10 µm2 HV-HBTs were achieved. This allows for fabrication of complex integrated circuits with several hundreds of transistors monolithically combining power and digital circuit parts.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
* Ubidyne GmbH, Lise-Meitner-Strasse 14, 89081 Ulm, Germany
Keywords:
GaInP/GaAs HBT, power HBT, mixed signal digital circuits, yield
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