808-nm TM Polarised High Power Broad Area Lasers with 69.5% Power Conversion Efficiency at 71-W
P. Crump, H. Wenzel, G. Erbert, S. Einfeldt, P. Ressel, M. Zorn, F. Bugge, M. Spreemann, F. Dittmar, R. Staske, and G. Tränkle
Published in:
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 4-9, paper CMN3 (2008).
Abstract:
We report TM polarized 808-nm Lasers bars with 69.5% efficiency at 15°C. Performance is limited by the low-strained InGaAsP quantum well, which has high threshold, low slope and high sensitivity to packaging induced stress.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
OCIS Codes:
(140.5960) Semiconductor lasers; (140.2010) Diode Laser Arrays; (250.5590) Quantum-well, -wire and -dot devices
© 2008 Optical Society of America. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Optical Society of America.
Full version in pdf-format.