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High peak power femtosecond pulses from modelocked semiconductor laser in external cavity
/forschung/publikationen/high-peak-power-femtosecond-pulses-from-modelocked-semiconductor-laser-in-external-cavity
The generation of high peak power femtosecond pulses from an all semiconductor laser system is demonstrated. The system is based on a passively modelocked two-section laser diode in an external…
Limitations of Current Compact Transit-Time Models for III-V-Based HBT
/forschung/publikationen/limitations-of-current-compact-transit-time-models-for-iii-v-based-hbt
This paper investigates the accuracy limitations of common compact bipolar transistor models towards higher frequencies. The device under test is a InGaP/GaAs HBT, simulated by the FBH HBT model. The…
Switch-Mode Amplifier ICs with over 90% Efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTs
/forschung/publikationen/switch-mode-amplifier-ics-with-over-90-efficiency-for-class-s-pas-using-gaas-hbts-and-gan-hemts
This paper reports on design and realization of monolithic switch-mode amplifiers for data rates up to 1.8 Gbps, suitable for Class-S and inverse class-D PA modules. GaN HEMT as well as high-voltage…
Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio
/forschung/publikationen/bandwidth-potential-of-hbt-based-twas-as-a-function-of-transistor-fmaxft-ratio
The bandwidth potential of cascode HBT-based broadband amplifiers following the traveling-wave amplifier (TWA) concept is studied. An approximate expression for the gain of the circuit is derived,…
Near band edge and defect emissions from epitaxial lateral overgrown α-plane GaN with different stripe orientations
/forschung/publikationen/near-band-edge-and-defect-emissions-from-epitaxial-lateral-overgrown-a-plane-gan-with-different-stripe-orientations
Epitaxial lateral overgrowth (ELOG) of α-plane GaN on r-plane sapphire with stripe orientations parallel to [0 0 0 1], [0 1 1 1], and [0 1 1 0] has…
Compact Large-Signal Shot-Noise Model for HBTs
/forschung/publikationen/compact-large-signal-shot-noise-model-for-hbts
A new description of the shot noise in HBTs is proposed that accounts for the correlation of the sources. It can easily be included in large-signal models, thus significantly improving the RF noise…
High resolution measurement of the thermal expansion coefficient of semiconductor multilayer lateral nanostructures
/forschung/publikationen/high-resolution-measurement-of-the-thermal-expansion-coefficient-of-semiconductor-multilayer-lateral-nanostructures
We measured the thermal expansion coefficient (TEC) of a vertically stacked multi-quantum-well (MQW) structure buried under a thick GaAs top layer before and after lateral patterning of the GaAs top…
Fundamental-Lateral Mode Stabilized High-Power Ridge-Waveguide Lasers With a Low Beam Divergence
/forschung/publikationen/fundamental-lateral-mode-stabilized-high-power-ridge-waveguide-lasers-with-a-low-beam-divergence
We compare ridge-waveguide lasers with trench widths of 5 and 20 µm. The emission wavelength is around 1064 nm and the ridge width is 5 µm. The maximum output power exceeds 2W.…
Visualization of heat flows in high-power diode lasers by lock-in thermography
/forschung/publikationen/visualization-of-heat-flows-in-high-power-diode-lasers-by-lock-in-thermography
Lock-in thermography is applied to analyze thermal properties of high-power diode lasers. With a temporal resolution of about 100 µs for thermal imaging of the entire device, microscopic heat…
Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching
/forschung/publikationen/determination-of-dislocation-density-in-movpe-grown-gan-layers-using-koh-defect-etching
We report on molten KOH-based defect etching of GaN epitaxial layers for the quantitative determination of the dislocation density. Etching process parameters were established at 450 °C that…