Transferred Substrate DHBT of ft = 410 GHz and fmax = 480 GHz for Traveling Wave Amplifiers
T. Krämer1, C. Meliani1, F. Lenk2, J. Würfl1, G. Tränkle1
Published in:
Int. Conf. on Indium Phosphide and Related Materials (IPRM 2008), Versailles, France, May 25-29, pp. 1-3 (2008).
Abstract:
We report a MMIC process in transferred substrate technology. The transistors of 0.8 × 5 µm2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Fachhochschule Lausitz, 01968 Senftenberg, Germany
Keywords:
InP heterojunction bipolar transistor, transferred substrate, wafer bonding, millimeter-wave, distributed amplifier
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