Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten
Ch. Hennig, E. Richter, M. Weyers, and G. Tränkle
Published in:
phys. stat. sol. (c), vol. 4, no. 7, pp. 2638-2641 (2007).
Abstract:
Self-separation of freestanding GaN layers of 50 mm diameter and thicknesses from around 50 µm to several hundred µm has been achieved using lateral overgrowth over silicon nitride masks with a high fraction of tungsten (WSiN). The moment of the separation was found to change with both the area ratio of the mask and the absolute structure size.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
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