Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
UV laser drilling of SiC for semiconductor device fabrication
/forschung/publikationen/uv-laser-drilling-of-sic-for-semiconductor-device-fabrication
Pulsed UV laser processing is used to drill micro holes in silicon carbide (SiC) wafers supporting AlGaN/GaN transistor structures. Direct laser ablation using nanosecond pulses has been proven to…
Optimizing the FDFD Method in Order to Minimize PML-Related Numerical Problems
/forschung/publikationen/optimizing-the-fdfd-method-in-order-to-minimize-pml-related-numerical-problems
Using the PML boundary condition in the finitedifference frequency-domain (FDFD) method can significantly affect the numerical condition of the resulting system of equations, causing a drastic…
Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC
/forschung/publikationen/analysis-of-materials-modifications-caused-by-uv-laser-micro-drilling-of-via-holes-in-algangan-transistors-on-sic
Pulsed UV laser drilling can be applied to fabricate vertical electrical interconnects (vias) for AlGaN/GaN high electron mobility transistor devices on single-crystalline silicon carbide (SiC)…
High power 980 nm tapered lasers with separate contacts: numerical simulation and comparison with experiments
/forschung/publikationen/high-power-980nbspnm-tapered-lasers-with-separate-contacts-numerical-simulation-and-comparison-with-experiments
This work present simulations of the operation of tapered semiconductor lasers with separate contacts, in comparison with the experimental results, with the goal of providing a physical understanding…
High-power 894 nm monolithic distributed-feedback lase
/forschung/publikationen/high-power-894nbspnm-monolithic-distributed-feedback-laser
A ridge-waveguide InGaAs/GaAsP laser, emitting up to 250 mW in a single lateral and longitudinal mode at a wavelength of 894 nm, is presented. The distributed feedback is provided by a…
High power pulse generation from a 10mm long monolithic multi section mode locked semiconductor laser at 920nm
/forschung/publikationen/high-power-pulse-generation-from-a-10mm-long-monolithic-multi-section-mode-locked-semiconductor-laser-at-920nm
Active and passive mode locking of a four section 10mm long monolithic 920nm DBR laser was investigated. 10ps pulses are generated at a repetition rate of 4GHz with a peak power of 1.3W.
A 30-GHz Waveguide-to-Microstrip-Transition
/forschung/publikationen/a-30-ghz-waveguide-to-microstrip-transition
Waveguide-to-microstrip transitions are essential elements for mm-wave transmitters and receivers. This paper presents an optimized transition with a relatively simple geometry and a minimum of…
High-power 980-nm monolithically integrated master-oscillator power-amplifier
/forschung/publikationen/high-power-980-nm-monolithically-integrated-master-oscillator-power-amplifier
Diode lasers emitting single-frequency, diffraction limited beams at a continuous-wave (CW) optical power of several Watts are required for many applications including frequency conversion,…
5.5 W output power from 100 µm stripe width lasers at 670 nm with a vertical far-field angle of 32 degrees
/forschung/publikationen/55nbspw-output-power-from-100nbspum-stripe-width-lasers-at-670nbspnm-with-a-vertical-far-field-angle-of-32nbspdegrees
670 nm broad area diode lasers with an output power of 5.5 W and a conversion efficiency of 40% will be presented. Reliable operation over 1800 h at more than 1 W will be…
450 nm blue laser emission of an intracavity-doubled Nd:ASL crystal pumped by an extended-cavity tapered laser diode
/forschung/publikationen/450nbspnm-blue-laser-emission-of-an-intracavity-doubled-ndasl-crystal-pumped-by-an-extended-cavity-tapered-laser-diode
For the pumping of one Nd:ASL crystal, we have developed a high-brightness external-cavity tapered laser diode stabilized at 798 nm, by use of a volume Bragg grating (VBG) in a simple and compact…