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MOVPE growth of semiconductor disk laser (SCDL) structures
/forschung/publikationen/movpe-growth-of-semiconductor-disk-laser-scdl-structures
Semiconductor disk lasers (SCDL), also known as vertical external-cavity surface-emitting lasers (VECSEL) or optically pumped semiconductor lasers (OPSLs) represent a new field in semiconductor…
On the possiblity of in-situ composition determination during AlGaInP growth in MOVPE
/forschung/publikationen/on-the-possiblity-of-in-situ-composition-determination-during-algainp-growth-in-movpe
AlGaInP lattice matched to GaAs is the key material in opto-electronic devices like light emitting diodes (LED), edge-emitting lasers (EEL) and vertical-cavity surface-emitting lasers (VCSEL)…
GaAs-based high power laser diodes
/forschung/publikationen/gaas-based-high-power-laser-diodes
Laser diodes with output power of several Watt from a single emitter stripe or several ten Watt from a multi-emitter array or laser bar are finding increasing application in different fields of laser…
Multi QWs for laser diodes with emission wavelengths above 1100 nm
/forschung/publikationen/multi-qws-for-laser-diodes-with-emission-wavelengths-above-1100-nm
Due to their high output power potential GaAs based laser diodes in the wavelength range at and beyond 1100 nm are interesting as pump sources for Raman amplifiers in telecommunication systems, for…
Simulation of high-power pulse generation due to modelocking in long multisection lasers
/forschung/publikationen/simulation-of-high-power-pulse-generation-due-to-modelocking-in-long-multisection-lasers
The dynamic behaviour of long monolithic modelocked lasers for the emission wavelength 1.06µm containing an active gain section and a passive cavity section was simulated. Numerical tools have…
High-Performance Laser Diodes With Emission Wavelengths Above 1100 nm and Very Small Vertical Divergence of the Far Field
/forschung/publikationen/high-performance-laser-diodes-with-emission-wavelengths-above-1100-nm-and-very-small-vertical-divergence-of-the-far-field
The effect of variations in the vertical structure on the performance of AlGaAs-GaAs laser diodes with an InGaAs quantum well (QW) emitting around 1120 nm was investigated. With very thick…
Passively mode-locked Yb:KLu(WO4)2 oscillators
/forschung/publikationen/passively-mode-locked-ybkluwo42-oscillators
We demonstrate passive mode locking based on the novel monoclinic double tungstate crystal Yb:KLu(WO4)2. We report the shortest pulses ever produced with an Yb-doped tungstate laser using a…
High-power 808 nm lasers with a super-large optical cavity
/forschung/publikationen/high-power-808-nm-lasers-with-a-super-large-optical-cavity
We present a detailed design and experimental study of diode laser structures emitting at 808 nm based on the combination of a GaAsP quantum well with well-established AlGaAs wave guide…
The flip-chip approach for millimeter wave packaging
/forschung/publikationen/the-flip-chip-approach-for-millimeter-wave-packaging
A particularly critical issue in this regard is module packaging, i.e., the way to assemble and connect several monolithic microwave integrated circuits (MMICs) in a multichip environment in order to…
Growth optimization for thick crack-free GaN layers on sapphire with HVPE
/forschung/publikationen/growth-optimization-for-thick-crack-free-gan-layers-on-sapphire-with-hvpe
Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H2/N2 as carrier gas leads to the lowest density of cracks in the…