Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
High-power ridge-wavequide broad-area lasers with a DFB resonator in the wavelength range 760- to 790-nm
/forschung/publikationen/high-power-ridge-wavequide-broad-area-lasers-with-a-dfb-resonator-in-the-wavelength-range-760-to-790-nm
High-power ridge-wavequide broad-area lasers with a DFB resonator in the wavelength range 760- to 790-nm A. Klehr, M. Braun, F. Bugge, G. Erbert, J. Fricke, A. Knauer,…
High-power 980-nm DFB diode lasers with a small vertical farfield divergence
/forschung/publikationen/high-power-980-nm-dfb-diode-lasers-with-a-small-vertical-farfield-divergence-1
We report on FP and DFB lasers with a vertical farfield angle of only 18° due to a super large optical cavity. Details of the structure and the characteristics up to 1 Watt optical power…
Passively cooled 940nm laser bar with 73% wall-plug efficiency and high reliability at 98 W quasi-cw output power
/forschung/publikationen/passively-cooled-940nm-laser-bar-with-73-wall-plug-efficiency-and-high-reliability-at-98-w-quasi-cw-output-power-1
Laser bars with low divergency and filling factor were operated on passively cooled heat sinks at 25°C. The maximum wall-plug efficiency was 73 % at 70 W. Excellent reliability was…
852-nm distributed-feedback diode lasers for atomic clocks and laser cooling
/forschung/publikationen/852-nm-distributed-feedback-diode-lasers-for-atomic-clocks-and-laser-cooling-1
We report on narrow linewidth DFB RW lasers emitting at the caesium D2 resonance wavelength. The devices operate in a single lateral and longitudinal mode up to 250 mW optical power with a…
980-nm DBR lasers using higher order gratings fabricated in a single-step process
/forschung/publikationen/980-nm-dbr-lasers-using-higher-order-gratings-fabricated-in-a-single-step-process-1
Single-longitudinal mode emission from two-section RW DBR diode lasers having 6th and 7th order gratings will be reported. Grating and RW have been simultaneously defined and fabricated using wafer…
Many Body and Nonparabolicity Effects in the Intersubband Transitions of Conduction and Valence Bands of Quantum Well Media
/forschung/publikationen/many-body-and-nonparabolicity-effects-in-the-intersubband-transitions-of-conduction-and-valence-bands-of-quantum-well-media-1
This paper highlights the strong band coupling and resulting nonparabolicity and k-dependence of the dipole moments combined with Coulomb corrections, that lead to double features in some of the…
5.3 W CW high brightness 980-nm tapered diode lasers
/forschung/publikationen/53-w-cw-high-brightness-980-nm-tapered-diode-lasers
980-nm tapered diode lasers having electrically separated straight ridge waveguide (RW) and tapered sections were mounted epi-side down on conductively cooled packages. With an optimal RW current, a…
Characterisation of heavily doped base layers of heterojunction bipolar transistors by time-resolved four-wave mixing technique
/forschung/publikationen/characterisation-of-heavily-doped-base-layers-of-heterojunction-bipolar-transistors-by-time-resolved-four-wave-mixing-technique
Characterisation of heavily doped base layers of heterojunction bipolar transistors by time-resolved four-wave mixing technique R. Aleksiejunas, M. Sudzius, K. Jarasiunas, A.…
A comparative study of higher order Bragg waveguide gratings using coupled-mode theory and mode expansion modeling
/forschung/publikationen/a-comparative-study-of-higher-order-bragg-waveguide-gratings-using-coupled-mode-theory-and-mode-expansion-modeling
Lamellar diffraction gratings integrated into slab waveguides (so-called Bragg waveguide gratings) found widespread applications in distributed-feedback (DFB) and distributed Bragg-reflector (DBR)…
Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides
/forschung/publikationen/use-of-wafer-temperature-determination-for-the-study-of-unintentional-parameter-influences-for-the-movpe-of-iii-nitrides
In this paper we will first report on the use of real-time determination of wafer temperature for transparent substrates. With this method we will study the unintentional influence of growth…