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Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance
/forschung/publikationen/development-and-control-of-movpe-growth-processes-for-devices-using-reflectance-anisotropy-spectroscopy-and-normalized-reflectance
The use of the optical in situ techniques reflectance anisotropy (RA) and normalized reflectance (NR) for metal-organic vapour-phase epitaxy (MOVPE) growth processes of compound semiconductor devices…
5.3 W cw output power from a Master Oscillator Power Amplifier at 1083 nm
/forschung/publikationen/53-w-cw-output-power-from-a-master-oscillator-power-amplifier-at-1083-nm
5.3 W cw output power from a Master Oscillator Power Amplifier at 1083 nm B. Sumpfa, S. Schwertfegera, J. Wiedmannb, A. Klehra, F. Dittmara, G. Erberta,…
Monolithic DFB laser diodes emitting at 785 nm for in situ SER Spectroscopy
/forschung/publikationen/monolithic-dfb-laser-diodes-emitting-at-785-nm-for-in-situ-ser-spectroscopy
Monolithic DFB laser diodes emitting at 785 nm for in situ SER Spectroscopy M. Maiwalda, G. Erberta, A. Klehra, B. Sumpfa, H. Wenzela, H. Schmidtb,…
Generation-Recombination Noise in Pseudomorphic Modulation-Doped Al0.2Ga0.8As/In0.1Ga0.9As/GaAs Micro-Hall Device
/forschung/publikationen/generation-recombination-noise-in-pseudomorphic-modulation-doped-al02ga08asin01ga09asgaas-micro-hall-devices
The noise spectrum in micro-Hall devices based on pseudomorphic Al0.2Ga0.8As/In0.1Ga0.9As/GaAs modulation- doped heterostructures was measured between 4 Hz and 65 kHz, allowing components…
Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots
/forschung/publikationen/photoluminescence-linewidths-from-multiple-layers-of-laterally-self-ordered-ingaas-quantum-dots
Laterally ordered multilayered arrays of InGaAs quantum dots are investigated by photoluminescence as a function of high index GaAs substrates. Different laser wavelengths are used to investigate the…
Optical In-Well Pumping of a Semiconductor Disk Laser With High Optical Efficiency
/forschung/publikationen/optical-in-well-pumping-of-a-semiconductor-disk-laser-with-high-optical-efficiency
Optical in-well pumping is shown to lead to highly efficient operation of semiconductor disk-lasers using resonant absorption or using external optics. Pump radiation absorption of 70% at 940nm is…
Carrier dynamics in laterally strain-modulated InGaAs quantum wells
/forschung/publikationen/carrier-dynamics-in-laterally-strain-modulated-ingaas-quantum-wells
We investigate the transient recombination and transfer properties of nonequilibrium carriers in an In0.16Ga0.84As/GaAs quantum well (QW) with an additional lateral confinement implemented by a…
Nearly Diffraction Limited 980-nm Tapered Diode Lasers With an Output Power of 7.7 W
/forschung/publikationen/nearly-diffraction-limited-980-nm-tapered-diode-lasers-with-an-output-power-of-77-w
High-brightness tapered diode lasers emitting at 980 nm with electrically separated straight ridge waveguide and tapered gain-guided sections were fabricated. An output power of more than…
High-Power High-Efficiency 1150-nm Quantum-Well Laser
/forschung/publikationen/high-power-high-efficiency-1150-nm-quantum-well-laser
Edge emitting diode lasers with highly strained InGaAs quantum wells and GaAs waveguide layers emitting at 1150 nm were investigated focusing on the impact of the waveguide design on the laser…
Space Tech Expo Europe
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Besuchen Sie uns am Berlin-Brandenburger Gemeinschaftsstand in Halle 5, Stand P42