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Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots
/forschung/publikationen/photoluminescence-linewidths-from-multiple-layers-of-laterally-self-ordered-ingaas-quantum-dots
Laterally ordered multilayered arrays of InGaAs quantum dots are investigated by photoluminescence as a function of high index GaAs substrates. Different laser wavelengths are used to investigate the…
Optical In-Well Pumping of a Semiconductor Disk Laser With High Optical Efficiency
/forschung/publikationen/optical-in-well-pumping-of-a-semiconductor-disk-laser-with-high-optical-efficiency
Optical in-well pumping is shown to lead to highly efficient operation of semiconductor disk-lasers using resonant absorption or using external optics. Pump radiation absorption of 70% at 940nm is…
Carrier dynamics in laterally strain-modulated InGaAs quantum wells
/forschung/publikationen/carrier-dynamics-in-laterally-strain-modulated-ingaas-quantum-wells
We investigate the transient recombination and transfer properties of nonequilibrium carriers in an In0.16Ga0.84As/GaAs quantum well (QW) with an additional lateral confinement implemented by a…
Nearly Diffraction Limited 980-nm Tapered Diode Lasers With an Output Power of 7.7 W
/forschung/publikationen/nearly-diffraction-limited-980-nm-tapered-diode-lasers-with-an-output-power-of-77-w
High-brightness tapered diode lasers emitting at 980 nm with electrically separated straight ridge waveguide and tapered gain-guided sections were fabricated. An output power of more than…
High-Power High-Efficiency 1150-nm Quantum-Well Laser
/forschung/publikationen/high-power-high-efficiency-1150-nm-quantum-well-laser
Edge emitting diode lasers with highly strained InGaAs quantum wells and GaAs waveguide layers emitting at 1150 nm were investigated focusing on the impact of the waveguide design on the laser…
Space Tech Expo Europe
/termine/space-tech-expo-europe
Besuchen Sie uns am Berlin-Brandenburger Gemeinschaftsstand in Halle 5, Stand P42
Umfassender Zugang zu leistungsfähiger Software – institutsweite Lizenzen u.a. für Programmierung, Datenanalyse und Modellierung
/media-center/presseinformationen/umfassender-zugang-zu-leistungsfaehiger-software-institutsweite-lizenzen-ua-fuer-programmierung-datenanalyse-und-modellierung
Seit Oktober können FBH-Mitarbeiterinnen und Mitarbeiter auf eine unbegrenzte Anzahl von MatLab- und Simulink-Lizenzen zugreifen und alle Toolboxen nutzen. Eine weitere Vereinbarung hat das…
Ultra-narrow linewidth diode lasers for spaceborne quantum photonics
/forschung/forschungsnews/ultra-narrow-linewidth-diode-lasers-for-spaceborne-quantum-photonics
The FBH has developed a novel monolithically integrated GaAs-based extended cavity diode laser (mECDL) emitting at 1064 nm with an astounding 3 dB linewidth of…
Novel Passivation Process for the Mirror Facets of Al-Free Active-Region High-Power Semiconductor Diode Lasers
/forschung/publikationen/novel-passivation-process-for-the-mirror-facets-of-al-free-active-region-high-power-semiconductor-diode-lasers
A novel process for the passivation of mirror facets of Al-free active-region high-power semiconductor diode lasers is presented. Designed for technological simplicity and minimum damage generated…
Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier
/forschung/publikationen/tunable-high-power-narrow-linewidth-semiconductor-laser-based-on-an-external-cavity-tapered-amplifier
A high-power narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The external cavity laser system uses a new tapered amplifier with a…