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Laser drilling of microvias in silicon carbide for AlGaN/GaN power transistors
/forschung/publikationen/laser-drilling-of-microvias-in-silicon-carbide-for-algangan-power-transistors
UV laser processing is used to drill micro holes in contact pads of high-power microwave transistor devices. The AlGaN/GaN transistor structures that require electrical contacts from the device’s…
Determination of Surface Recombination Velocity so and Carrier Lifetime τo from IF (VG) Characteristics of Al/PECVD-SiNx/pn-GaAs Gated Diodes
/forschung/publikationen/determination-of-surface-recombination-velocity-so-and-carrier-lifetime-tauo-from-if-vg-characteristics-of-alpecvd-sinxpn-gaas-gated-diodes
Investigations on Al/SiNx/pn-GaAs gated diodes reveal that the forward current IF in the recombination current region consists of a bulk current part being generated in the depletion region of the…
High power diode laser: physics and technology of key elements for modern laser applications
/forschung/publikationen/high-power-diode-laser-physics-and-technology-of-key-elements-for-modern-laser-applications
Due to there high efficiency, compact size, excellent reliability and the capability of mass production high power diode lasers are key elements for modern laser technology. In this paper…
Utilization of wet chemical etching for revealing defects in GaAs X-ray detector arrays
/forschung/publikationen/utilization-of-wet-chemical-etching-for-revealing-defects-in-gaas-x-ray-detector-arrays
The aim of the study was to check the potential of wet chemical etching to improve the performance of GaAs-based X-ray detector arrays in view of their applications in medical diagnostics and…
High power, high gain AlGaN/GaN HEMTs with novel power bar design
/forschung/publikationen/high-power-high-gain-algangan-hemts-with-novel-power-bar-design
Gallium nitride transistors for high power microwave application are often limited by power loss due to extended transistor finger size. A new design for the gate supply is presented which allows for…
A Novel Spark-Plug for Improved Ignition in Engines with Gasoline Direct Injection (GDI)
/forschung/publikationen/a-novel-spark-plug-for-improved-ignition-in-engines-with-gasoline-direct-injection-gdi
Gasoline direct injection (GDI) is one of the future engine concepts offering a significant increase in efficiency of automotive engines. In this technique, the gasoline spray is directly injected…
Novel development platform, integrating laser diodes with drivers and control electronics
/forschung/forschungsnews/novel-development-platform-integrating-laser-diodes-with-drivers-and-control-electronics
We have developed a new laser mount that combines high performance with high flexibility in circuitry design. It represents an ideal low-cost development platform for complex laser sources, suited…
FBH To Show Semiconductors For Space And Quantum Tech
/media-center/medienschau/fbh-to-show-semiconductors-for-space-and-quantum-tech
From November 16-19, 2021, the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) will be at the Space Tech Expo Europe in Bremen, Germany. FBH has long-term experience in…
Nachhaltiger Einsatz für Chancengleichheit
/media-center/presseinformationen/nachhaltiger-einsatz-fuer-chancengleichheit
Das FBH wurde zum fünften Mal mit dem TOTAL E-QUALITY Prädikat ausgezeichnet und erhielt nun auch den Nachhaltigkeitspreis für sein langjähriges Engagement für die Chancengleichheit.
For the first time achieved – CW operation from 405 nm GaN-based DBR laser diodes using high-order surface gratings
/forschung/forschungsnews/for-the-first-time-achieved-cw-operation-from-405-nm-gan-based-dbr-laser-diodes-using-high-order-surface-gratings
The results are based on FBH’s advanced surface grating technology, demonstrating single longitudinal mode operation with a 0.03 nm FWHM of the emission peak and an SMSR of 40 d.