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980-nm DBR lasers using higher order gratings fabricated in a single-step process
/forschung/publikationen/980-nm-dbr-lasers-using-higher-order-gratings-fabricated-in-a-single-step-process-1
Single-longitudinal mode emission from two-section RW DBR diode lasers having 6th and 7th order gratings will be reported. Grating and RW have been simultaneously defined and fabricated using wafer…
Many Body and Nonparabolicity Effects in the Intersubband Transitions of Conduction and Valence Bands of Quantum Well Media
/forschung/publikationen/many-body-and-nonparabolicity-effects-in-the-intersubband-transitions-of-conduction-and-valence-bands-of-quantum-well-media-1
This paper highlights the strong band coupling and resulting nonparabolicity and k-dependence of the dipole moments combined with Coulomb corrections, that lead to double features in some of the…
5.3 W CW high brightness 980-nm tapered diode lasers
/forschung/publikationen/53-w-cw-high-brightness-980-nm-tapered-diode-lasers
980-nm tapered diode lasers having electrically separated straight ridge waveguide (RW) and tapered sections were mounted epi-side down on conductively cooled packages. With an optimal RW current, a…
Characterisation of heavily doped base layers of heterojunction bipolar transistors by time-resolved four-wave mixing technique
/forschung/publikationen/characterisation-of-heavily-doped-base-layers-of-heterojunction-bipolar-transistors-by-time-resolved-four-wave-mixing-technique
Characterisation of heavily doped base layers of heterojunction bipolar transistors by time-resolved four-wave mixing technique R. Aleksiejunas, M. Sudzius, K. Jarasiunas, A.…
A comparative study of higher order Bragg waveguide gratings using coupled-mode theory and mode expansion modeling
/forschung/publikationen/a-comparative-study-of-higher-order-bragg-waveguide-gratings-using-coupled-mode-theory-and-mode-expansion-modeling
Lamellar diffraction gratings integrated into slab waveguides (so-called Bragg waveguide gratings) found widespread applications in distributed-feedback (DFB) and distributed Bragg-reflector (DBR)…
Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides
/forschung/publikationen/use-of-wafer-temperature-determination-for-the-study-of-unintentional-parameter-influences-for-the-movpe-of-iii-nitrides
In this paper we will first report on the use of real-time determination of wafer temperature for transparent substrates. With this method we will study the unintentional influence of growth…
Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance
/forschung/publikationen/development-and-control-of-movpe-growth-processes-for-devices-using-reflectance-anisotropy-spectroscopy-and-normalized-reflectance
The use of the optical in situ techniques reflectance anisotropy (RA) and normalized reflectance (NR) for metal-organic vapour-phase epitaxy (MOVPE) growth processes of compound semiconductor devices…
5.3 W cw output power from a Master Oscillator Power Amplifier at 1083 nm
/forschung/publikationen/53-w-cw-output-power-from-a-master-oscillator-power-amplifier-at-1083-nm
5.3 W cw output power from a Master Oscillator Power Amplifier at 1083 nm B. Sumpfa, S. Schwertfegera, J. Wiedmannb, A. Klehra, F. Dittmara, G. Erberta,…
Monolithic DFB laser diodes emitting at 785 nm for in situ SER Spectroscopy
/forschung/publikationen/monolithic-dfb-laser-diodes-emitting-at-785-nm-for-in-situ-ser-spectroscopy
Monolithic DFB laser diodes emitting at 785 nm for in situ SER Spectroscopy M. Maiwalda, G. Erberta, A. Klehra, B. Sumpfa, H. Wenzela, H. Schmidtb,…
Generation-Recombination Noise in Pseudomorphic Modulation-Doped Al0.2Ga0.8As/In0.1Ga0.9As/GaAs Micro-Hall Device
/forschung/publikationen/generation-recombination-noise-in-pseudomorphic-modulation-doped-al02ga08asin01ga09asgaas-micro-hall-devices
The noise spectrum in micro-Hall devices based on pseudomorphic Al0.2Ga0.8As/In0.1Ga0.9As/GaAs modulation- doped heterostructures was measured between 4 Hz and 65 kHz, allowing components…