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In situ determination and control of AlGaInP composition during MOVPE growth
/forschung/publikationen/in-situ-determination-and-control-of-algainp-composition-during-movpe-growth
The influence of composition changes in (AlxGa1-x)1-yInyP grown on GaAs in metal-organic vapour-phase epitaxy on the in situ measured optical signals reflectance anisotropy (RA) and normalized…
A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling
/forschung/publikationen/a-comparative-study-of-higher-order-bragg-gratings-coupled-mode-theory-versus-mode-expansion-modeling
The modal reflectivity and loss of lamellar diffraction gratings to be used in distributed-feedback and distributed-Bragg reflector lasers were computed in dependence of wavelength, duty cycle and…
Optical Detection of Asymmetric Quantum-Dot Molecules in Double-Layer InAs/GaAs Structures
/forschung/publikationen/optical-detection-of-asymmetric-quantum-dot-molecules-in-double-layer-inasgaas-structures
Self-assembled quantum dots (QDs) in double-layer InAs/GaAs structures are studied by resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly correlated (50%) double-layer…
Laser Diodes with highly strained InGaAs MQWs and very narrow far fields
/forschung/publikationen/laser-diodes-with-highly-strained-ingaas-mqws-and-very-narrow-far-fields
The effect of variation of the number of highly strained InGaAs quantum wells embedded in GaAs layers on the crystal quality of the epitaxial layers and AlGaAs/GaAs laser diodes was investigated.…
High power broad area 808 nm DFB lasers for pumping solid state lasers
/forschung/publikationen/high-power-broad-area-808-nm-dfb-lasers-for-pumping-solid-state-lasers
High power broad area 808 nm DFB lasers for pumping solid state lasers A. Klehr, F. Bugge, G. Erbert, J. Fricke, A. Knauer, P. Ressel, H. Wenzel,…
High-Power 980-nm DFB RW Lasers With a Narrow Vertical Far Field
/forschung/publikationen/high-power-980-nm-dfb-rw-lasers-with-a-narrow-vertical-far-field
We compare 980-nm distributed-feedback ridgewaveguide lasers having cavity lengths of 1.5 and 3 mm. The maximum single-mode output powers are 500 and 700 mW, respectively. The full-width at…
600 mW optical output power at 488 nm by use of a high-power hybrid laser diode system and a periodically poled MgO:LiNbO3 bulk crystal
/forschung/publikationen/600nbspmw-optical-output-power-at-488nbspnm-by-use-of-a-high-power-hybrid-laser-diode-system-and-a-periodically-poled-mgolinbo3
600 mW second-harmonic blue light at 488 nm has been generated by use of a master-oscillator power amplifier diode laser system as a pump source with a maximum optical output power of…
Amplified-Spontaneous-Emission Spectrum of the Radiation Field in Surface-Emitting DFB Lasers
/forschung/publikationen/amplified-spontaneous-emission-spectrum-of-the-radiation-field-in-surface-emitting-dfb-lasers
In this paper, the authors calculate the amplified-spontaneous- emission spectrum of the radiation field in surface-emitting distributed feedback (DFB) lasers. The response of the laser cavity to the…
High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M2 = 1.9 at P = 4.4 W
/forschung/publikationen/high-power-808-nm-tapered-diode-lasers-with-nearly-diffraction-limited-beam-quality-of-m2nbspnbsp19-at-pnbspnbsp44nbspw
High-power 808-nm tapered diode lasers mounted as single emitters with very good brightness were manufactured and analyzed. The beam propagation ratio M2 is 1.9 at 4.4 W; a very low beam…
7.4 W continuous-wave output power of master oscillator power amplifier system at 1083 nm
/forschung/publikationen/74nbspw-continuous-wave-output-power-of-master-oscillator-power-amplifier-system-at-1083nbspnm
A 1083 nm hybrid master oscillator power amplifier system consisting of a DBR laser and a tapered amplifier has been realised. A maximum output power of 7.4 W in single-longitudinal mode…