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W-Band Flip-Chip VCO in Thin-Film Environment
/forschung/publikationen/w-band-flip-chip-vco-in-thin-film-environment
A flip-chip packaging approach for W-band GaAs chips is presented using thin-film structures on silicon as carrier substrate. Reliability investigations indicate that, depending on bump size, the CTE…
Low Phase Noise X-Band Push-Push Oscillator with Frequency Divider
/forschung/publikationen/low-phase-noise-x-band-push-push-oscillator-with-frequency-divider
A MMIC Colpitts oscillator in push-push configuration with integrated frequency divider using InGaP/GaAs HBTs is pre-sented. The output is taken from the second harmonic port while the fundamental…
A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analytical and Experimental Study
/forschung/publikationen/a-40-gbps-gaas-hbt-distributed-amplifier-with-an-over-ft-cut-off-frequency-analytical-and-experimental-study
The bandwidth potential of HBT distributed amplifiers following the traveling-wave concept (TWA) is studied. Basic parameters are the transistor characteristics as well as the losses of the…
Microscopic theory for the valence intersubband absorption of quantum wells
/forschung/publikationen/microscopic-theory-for-the-valence-intersubband-absorption-of-quantum-wells
In this paper we focus on the temperature dependence and on a detailed analysis of the interplay between Coulomb effects at Hartree-Fock level,namely:subband shifts,exchange and depolarization shifts…
Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs
/forschung/publikationen/consistent-modeling-of-capacitances-and-transit-times-of-gaas-based-hbts
This paper investigates how time delays and capacitances observed under small-signal conditions can be consistently accounted for in heterojunction bipolar transistor (HBT) large-signal models. The…
Optimized two-layer overgrowth of a lateral strain-modulated nanostructure
/forschung/publikationen/optimized-two-layer-overgrowth-of-a-lateral-strain-modulated-nanostructure
Recently it has been shown that lateral carrier confinement in an InGaAs quantum well (QW) embedded in GaAs can be achieved by using a laterally patterned InGaP stressor layer on top of the…
Mode-locked laser operation of epitaxially grown Yb:KLu(WO4)2 composites
/forschung/publikationen/mode-locked-laser-operation-of-epitaxially-grown-ybkluwo42-composites
Mode locking based on an epitaxial composite of the monoclinic double tungstate crystal Yb:KLu(WO4)2 is realized. A 100 µm thin Yb:KLu(WO4)2 layer grown on a KLu(WO4)2 substrate is used as…
Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser
/forschung/publikationen/blue-489-nm-picosecond-pulses-generated-by-intracavity-frequency-doubling-in-a-passively-mode-locked-optically-pumped-semiconductor-disk-laser
We report the generation of blue 489-nm picosecond laser pulses by in-tracavity second-harmonic generation in a mode-locked optically pumped InGaAs vertical-external-cavity surface-emitting laser.…
Tailoring of high-temperature photoluminescence in InAs/GaAs bilayer quantum dot structures
/forschung/publikationen/tailoring-of-high-temperature-photoluminescence-in-inasgaas-bilayer-quantum-dot-structures
Temperature-dependent photoluminescence is investigated in bilayer InAs/GaAs quantum dot structures with constant InAs deposition θ1 in the seed layer, but variable deposition θ2 in both…
980-nm DBR lasers using higher order gratings defined by i-line lithography
/forschung/publikationen/980-nm-dbr-lasers-using-higher-order-gratings-defined-by-i-line-lithography
We report on the simultaneous definition and fabrication of Bragg gratings and ridge waveguides using wafer stepper lithography and reactive ion etching, respectively. Single-longitudinal mode…