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Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE
/forschung/publikationen/reactor-and-growth-process-optimization-for-growth-of-thick-gan-layers-on-sapphire-substrates-by-hvpe
In total, 120 µm thick GaN layers without cracks have been grown on 2 in sapphire substrates by hydride vapor phase epitaxy. This has been achieved by optimization of the flow…
Application of reflectance anisotropy spectroscopy to laser diode growth in MOVPE
/forschung/publikationen/application-of-reflectance-anisotropy-spectroscopy-to-laser-diode-growth-in-movpe
The growth of layer structures for visible and near-infrared laser diodes is investigated in metal-organic vapour phase epitaxy (MOVPE) under production-like conditions using reflectance anisotropy…
Mobile plasma activation of polymers using the plasma gun
/forschung/publikationen/mobile-plasma-activation-of-polymers-using-the-plasma-gun
Surface activation of hydrophobic polymers is important prior to effective painting and glueing. The purpose of the plasma gun is the activation of polymers under normal pressure using a plasma…
Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures
/forschung/publikationen/interdot-carrier-transfer-in-asymmetric-bilayer-inasgaas-quantum-dot-structures
Transient photoluminescence from a series of asymmetric InAs quantum-dot bilayers with a GaAs barrier layer thickness varying from 30 to 60 monolayers between the quantum-dot planes is investigated.…
Passively cooled 940 nm laser bars with 73% wall-plug efficiency at 70 W and 25 °C
/forschung/publikationen/passively-cooled-940-nm-laser-bars-with-73-wall-plug-efficiency-at-70-w-and-25nbspdegc
940 nm laser bars with a vertical divergence of 27° (FWHM) and a filling factor of 30% were operated on passively cooled heatsinks at 25 °C. The maximum output power was 95 W,…
Numerical Field Simulation used to develop high bit-rate coaxial-to-CPW-interconnects
/forschung/publikationen/numerical-field-simulation-used-to-develop-high-bit-rate-coaxial-to-cpw-interconnects
Numerical Field Simulation used to develop high bit-rate coaxial-to-CPW-interconnects F.J. Schmückle Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489…
RF Matching of a Reactive Ion Etching (RIE) Plasma Reactor
/forschung/publikationen/rf-matching-of-a-reactive-ion-etching-rie-plasma-reactor
RF Matching of a Reactive Ion Etching (RIE) Plasma Reactor R. Gesche Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Comprehensive characterization of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy
/forschung/publikationen/comprehensive-characterization-of-movpe-grown-algaasalas-distributed-bragg-reflector-structures-by-optical-reflectance-x-ray-diffraction-and-atomic-force-microscopy
This paper reports on a comprehensive characterization of MOVPE-grown AlxGa1-xAs/AlAs distributed Bragg reflector (DBR) structures via optical reflectance, X-ray diffraction (XRD) and atomic force…
Growth of strained GaAsSb layers on GaAs(001) by MOVPE
/forschung/publikationen/growth-of-strained-gaassb-layers-on-gaas001-by-movpe
We investigated the growth of GaAsSb layers and quantum wells (QW) on GaAs(001) by MOVPE. Sb concentrations up to 12% were achieved at low arsine partial pressure and low growth temperature. Varying…
Avoidance of surface-related defects in MOVPE-grown InGaP layers
/forschung/publikationen/avoidance-of-surface-related-defects-in-movpe-grown-ingap-layers
Deep-level transient spectroscopy studies of n-type InGaP/GaAs structures revealed an electron trap E1 with a thermal activation energy of 0.75 eV. From the shape of the depth profiles for this…