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MOVPE growth of GaInP/GaAs hetero-bipolar-transistors using CBr4 as carbon dopant source
/forschung/publikationen/movpe-growth-of-gainpgaas-hetero-bipolar-transistors-using-cbr4-as-carbon-dopant-source
Carbon doping of GaAs with carbon tetrabromide (CBr4) in low pressure MOVPE has been investigated and applied to the fabrication of HBTs. Especially the hydrogen incorporation and the associated…
Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication
/forschung/publikationen/growth-monitoring-by-reflectance-anisotropy-spectroscopy-in-movpe-reactors-for-device-fabrication
Reflectance anisotropy spectroscopy (RAS) has proved its capability to study surface processes during metalorganic vapour phase epitaxy (MOVPE) growth of a variety of III–V compounds. However, these…
Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction
/forschung/publikationen/identification-of-a-buried-single-quantum-well-within-surface-structured-semiconductors-using-depth-resolved-x-ray-grazing-incidence-diffraction
A free standing surface wire nanostructure defined on GaAs[001] containing a 5 nm thick GaInAs single quantum well (SQW) was analysed, recording reciprocal space maps by coplanar high-resolution…
Influence of growth temperature and substrate orientation on the layer properties of MOVPE-grown (GaIn)(AsP)/GaAs
/forschung/publikationen/influence-of-growth-temperature-and-substrate-orientation-on-the-layer-properties-of-movpe-grown-gainaspgaas
The luminescence properties of In1−xGaxAsyP1−y layers and heterostructures grown lattice matched to GaAs by metalorganic vapour-phase epitaxy (MOVPE) were studied and correlated to the crystalline…
Gain spectra measurement by a variable stripe length method with current injection
/forschung/publikationen/gain-spectra-measurement-by-a-variable-stripe-length-method-with-current-injection
A new method for determining gain spectra is presented. The amplified spontanous emission is measured and spectrally resolved in both TE and TM polarisations; it is dependent on the current injected…
Characterization of InxGa1-xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction
/forschung/publikationen/characterization-of-inxga1-xas-single-quantum-wells-buried-in-gaas9100193-by-grazing-incidence-diffraction
The depth profile of the chemical composition in InxGa1-xAs single quantum wells (SQWs), epitaxially grown onto a GaAs[001] substrate and covered by a GaAs cap layer, has been determined by…
Evaluation of strained InGaAs/GaAs quantum wells by atomic force microscopy
/forschung/publikationen/evaluation-of-strained-ingaasgaas-quantum-wells-by-atomic-force-microscopy
Atomic force microscopy (AFM) is adopted for evaluation of strained InGaAs/GaAs quantum well structures grown by metalorganic vapor phase epitaxy. InAs-rich clusters are formed at the upper interface…
Comparison of Ti/Pt/Au and Ti/Ru/Au contact systems to p-type InGaP
/forschung/publikationen/comparison-of-tiptau-and-tiruau-contact-systems-to-p-type-ingap
The electrical and metallurgical properties of vacuum-evaporated Ti/Pt/Au and Ti/Ru/Au contacts to moderately doped p-type InGaP (p ∼ 3 × 1018 cm−3) and their…
Structure and stability studies on W, WSi, WSiN/GaAs systems by XRD
/forschung/publikationen/structure-and-stability-studies-on-w-wsi-wsingaas-systems-by-xrd
The microstructural properties of tungsten, tungsten silicide and tungsten silicide nitride layers on GaAs were studied by thin film x-ray diffraction and correlated with deposition parameters,…
Low resistance (~1x10-6 cm-2) Au/Ge/Pd ohmic contact to n-Al0.5In0.5P
/forschung/publikationen/low-resistance-1x10-6-cm-2-augepd-ohmic-contact-to-n-al05in05p
A Au (1000 Å)/Ge (100 Å)/Pd (100 Å) contact scheme has been investigated to form low resistance Ohmic contact to n-Al0.5In0.5P (E g =2.3 eV) with a minimum contact resistivity of…