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Preparation, transmission electron microscopy, and microanalytical investigations of metal-III-V-semiconductor interfaces
/forschung/publikationen/preparation-transmission-electron-microscopy-and-microanalytical-investigations-of-metal-iii-v-semiconductor-interfaces-1-1
Ohmic metallizations on semiconductors such as In0.53Ga0.47As and GaAs have been analyzed by cross-sectional transmission electron microscopy. To obtain a lattice image of multilayer structures in…
Publikationen
/forschung/publikationen/quotcomposition-fluctuations-in-ingaasp-single-layers-and-laser-structures-based-on-gaasquot
XRD investigations of WSiN and LaB6 Layers on GaAs
/forschung/publikationen/xrd-investigations-of-wsin-and-lab6-layers-on-gaas
The microstructures of WSiN and LaB6 thin layers (amorphous or crystalline) on GaAs substrates are studied in dependence on the deposition and annealing treatments by means of the TFXRD parallel-beam…
XTEM investigation of Ge/Pd shallow contact to p-In0.53Ga0.47As
/forschung/publikationen/xtem-investigation-of-gepd-shallow-contact-to-p-in053ga047as
Cross-sectional transmission electron microscopy, in combination with energy dispersive X-ray spectroscopy and focused beam microdiffraction, was applied to study the solid-state reactions taking…
Shallow and low-resistive contacts to p-In0.53Ga0.47As based on Pd/Sb and Pd/Ge metallisations
/forschung/publikationen/shallow-and-low-resistive-contacts-to-p-in053ga047as-based-on-pdsb-and-pdge-metallisations
Ohmic contacts on moderately doped In0.53Ga0.47As (p = 4 × 1018cm3) have been prepared using Pd/Zn/Sb/Pd and Pd/Zn/Pd/Ge metallisations. Low contact resistivities have been achieved, i.e. 3-7 ×…
Publikationen
/forschung/publikationen/pdznpdau-and-pdznaulab6au-ohmic-contacts-to-p-type-in053ga047as
The resistivity and interfacial characteristics of Pd/Zn/Pd/Au and Pd/Zn/Au/LaB6/Au contacts to p-In0.53Ga0.47As have been investigated. Annealing of the contacts at 375-425 °C yielded a minimum…
Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As
/forschung/publikationen/transmission-electron-microscopy-study-of-rapid-thermally-annealed-pdge-contacts-on-in053ga047as
Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction,…