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EMRS 2024
/termine/emrs-2024
Das FBH präsentiert aktuelle Forschungsergebnisse beim European Materials Research Society Fall Meeting 2024.
MNE 2024
/termine/mne-2024
Das FBH beteiligt sich mit zwei Beiträgen an der 50th International Micro and Nano Engineering Conference.
A Highly Linear Single-Balanced Resistive X-band MMIC Mixer in GaN HEMT Technology
/forschung/publikationen/a-highly-linear-single-balanced-resistive-x-band-mmic-mixer-in-gan-hemt-technology
In this paper a highly linear X-band MMIC mixer implemented in a 0.25 µm GaN HEMT technology is presented. The mixer is based on a single-balanced resistive architecture using a pair of…
Ka-Band GaN Power Amplifier with Integrated DC Supply Switch and RF Switch
/forschung/publikationen/ka-band-gan-power-amplifier-with-integrated-dc-supply-switch-and-rf-switch
This work presents power amplifiers with integrated features like DC supply switch for reducing the power consumption in receive mode of an RF front end (RFFE) module and RF switch for compact RFFE…
A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs
/forschung/publikationen/a-computational-analysis-of-the-impact-of-thin-undoped-channels-in-surface-related-current-collapse-of-algangan-hemts
This study provides an insight into the impact of thin purely undoped GaN channel thickness (tch) on surface-related trapping effects in AlGaN/GaN high electron mobility transistors. Our TCAD study…
Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements
/forschung/publikationen/unraveling-carrier-distribution-in-far-uvc-leds-by-temperature-dependent-electroluminescence-measurements
The hole transport and the carrier distribution in AlGaN-based far-ultraviolett (UVC) light emitting diodes (LEDs) emitting around 233 nm was investigated. Temperature-dependent…
Thermal stability of Pd/Zn and Pt based contacts to p- In0.53Ga0.47AsInP with various barrier layers
/forschung/publikationen/thermal-stability-of-pdzn-and-pt-based-contacts-to-p-in053ga047asinp-with-various-barrier-layers
Pd/Zn/Au contacts to p- In0.53Ga0.47AsInP with various types of barrier layers to the indiffusion of Au have been examined by Rutherford backscattering spectrometry (RBS). For the metallizations…
Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (λ = 1020 nm) ridge waveguide laser diodes
/forschung/publikationen/monomode-emission-at-350-mw-and-high-reliability-with-ingaasalgaas-l-1020-nm-ridge-waveguide-laser-diodes
3.35 mm long InGAs/GaAs/AlGaAs ridge waveguide lasers emitting at 1020 nm showed monomode emission up to 350 mW. By widening the emission near field and protecting the facets with…
Reliable high-power InGaAs/AlGaAs ridge waveguide laser diodes
/forschung/publikationen/reliable-high-power-ingaasalgaas-ridge-waveguide-laser-diodes
In application of RW laser diodes with monomode emission, like pumping sources for fibre amplifiers in optical communication systems, very high output powers are desirable. During the last years,…
Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
/forschung/publikationen/real-time-monitoring-of-movpe-device-growth-by-reflectance-anisotropy-spectroscopy-and-related-optical-techniques
Reflectance anisotropy spectroscopy (RAS/RDS) so far has been mostly used for basic growth studies in both molecular beam epitaxy (MBE) and metal-organic vapor-phase epitaxy (MOVPE). Due to its…