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Modelling of edges and corners in the alternating transmission line matrix (ATLM) scheme
/forschung/publikationen/modelling-of-edges-and-corners-in-the-alternating-transmission-line-matrix-atlm-scheme
An improved scattering matrix for modelling edge and corner nodes with the alternating transmission line matrix (ATLM) method is presented. ATLM simulations with new edge and corner nodes show much…
Optimum Mesh Grading for Finite-Difference Method
/forschung/publikationen/optimum-mesh-grading-for-finite-difference-method
The coarseness error of the finite-difference (FD) method is studied analyzing a typical planar waveguide and a rectangular coaxial geometry. Results for equidistant and graded mesh are compared in…
Three-Dimensional Full-Vector Analysis of Optical Waveguides by Finite-Integration Beam-Propagation Method (FIBPM)
/forschung/publikationen/three-dimensional-full-vector-analysis-of-optical-waveguides-by-finite-integration-beam-propagation-method-fibpm
In the paper a novel finite-integration beam-propagation method (FIBPM) is presented. This method is especially suited for the simulation of optical waveguides containing extremely thin layers of…
A coplanar 38-GHz SiGe MMIC oscillator
/forschung/publikationen/a-coplanar-38-ghz-sige-mmic-oscillator
Design, technology, and first results of a coplanar Si-SiGe HBT oscillator monolithically integrated on high-resistivity silicon are reported. At 38 GHz, an oscillator output power of 2 dBm with a…
High-impedance coplanar waveguides with low attenuation
/forschung/publikationen/high-impedance-coplanar-waveguides-with-low-attenuation
The conventional MMIC coplanar line covers an impedance range from about 30-80 Ω. Values outside this range cannot be fabricated reliably or cause excessive losses, For several applications, however,…
Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98µm) laser diodes
/forschung/publikationen/simple-method-for-examining-sulphur-passivation-of-facets-in-ingaas-algaas-l098um-laser-diodes
The effect of (NH4)2Sx treatment of the facet of InGaAs/AlGaAs ridge waveguide (RW) laser diodes on the nonradiative current and catastrophic optical damage (COD) level is reported. Using the…
Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes
/forschung/publikationen/stability-of-sulfur-passivated-facets-of-ingaas-algaas-laser-diodes
The facets of GaAs-AlGaAs ridge waveguide (RW) laser diodes were passivated using (NH4)2Sz. The effectiveness of this procedure was checked by electroluminescence power-voltage-current (P-V-Z)…
High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers
/forschung/publikationen/high-power-diode-lasers-based-on-ingaasp-spacer-and-waveguide-layers-with-algaas-cladding-layers
High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers G. Erbert, F. Bugge, A. Knauer, J. Sebastian, K. Vogel, M. Weyers …
Application of a Two-Dimensional Direction Dependent Sub-µm-Offset Sensor
/forschung/publikationen/application-of-a-two-dimensional-direction-dependent-sub-um-offset-sensor
Application of a Two-Dimensional Direction Dependent Sub-µm-Offset Sensor R. Güther, R. Staske, M. Becker Ferdinand-Braun-Institut für Höchstfrequenztechnik, Germany
Spectral properties of a system describing fast pulsating DFB lasers
/forschung/publikationen/spectral-properties-of-a-system-describing-fast-pulsating-dfb-lasers
A model describing self pulsating distributed feedback semiconductor lasers is investigated with mathematical rigour. Qualitative statements on its spectral properties are proved.