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Mechanisms of fast self pulsations in two-section DFB lasers
/forschung/publikationen/mechanisms-of-fast-self-pulsations-in-two-section-dfb-lasers
We show theoretically, that the detuning between the resonance frequencies of differently pumped DFB sections gives rise to two different pulsation mechanisms, 1) dispersive self Q-switching of a…
Simulation of single-mode high-power semiconductor lasers
/forschung/publikationen/simulation-of-single-mode-high-power-lasers
Simulation of single-mode high-power semiconductor lasers H. Wenzel, G. Erbert Ferdinand-Braun-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Effect of growth temperature on performance of AlGaAs/InGaAs/GaAs QW laser diodes
/forschung/publikationen/effect-of-growth-temperature-on-performance-of-algaasingaasgaas-qw-laser-diodes
Growth and characterization results are presented for high-power laser diodes with AlGaAs cladding and waveguide layers and strained In1-xGaxAs quantum wells with 0.09 < x < 0.25 grown by…
Effect of strain and growth temperature on In incorporation and properties of high power laser diodes in MOVPE grown (In,Ga)(As,P)/GaAs
/forschung/publikationen/effect-of-strain-and-growth-temperature-on-in-incorporation-and-properties-of-high-power-laser-diodes-in-movpe-grown-ingaaspgaas
Effect of strain and growth temperature on In incorporation and properties of high power laser diodes in MOVPE grown (In,Ga)(As,P)/GaAs F. Bugge, G. Erbert, S. Gramlich,…
MOVPE growth of (In,Ga)(As,P) for high-power laser diodes
/forschung/publikationen/movpe-growth-of-ingaasp-for-high-power-laser-diodes
MOVPE growth of (In,Ga)(As,P) for high-power laser diodes A. Knauer, F. Bugge, G. Erbert, A. Oster, M. Weyers Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin,…
Carbon doped GaAs grown by MOVPE using CBr4
/forschung/publikationen/carbon-doped-gaas-grown-by-movpe-using-cbr4
Carbon doped GaAs grown by MOVPE using CBr4 P. Kurpas, E. Richter, D. Gutsche, F. Brunner, M. Weyers Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, Germany
Preparation, transmission electron microscopy, and microanalytical investigations of metal-III-V-semiconductor interfaces
/forschung/publikationen/preparation-transmission-electron-microscopy-and-microanalytical-investigations-of-metal-iii-v-semiconductor-interfaces-1-1
Ohmic metallizations on semiconductors such as In0.53Ga0.47As and GaAs have been analyzed by cross-sectional transmission electron microscopy. To obtain a lattice image of multilayer structures in…