M. Zorn , A. Knigge, U. Zeimer, A. Klein, H. Kissel, M. Weyers, G. Tränkle

Published in:

Journal of Crystal Growth 248 (2003) 186-193.

Abstract:

This paper summaries the development of the epitaxial growth process for visible vertical-cavity surface-emitting lasers (VCSELs) in metal-organic vapour phase epitaxy (MOVPE). The production of these devices which are of particular interest, e.g. for data communications via plastic optical fibres or for consumer electronics, is a real challenge for MOVPE due to the unfavourable material properties in the AlInGaP/AlGaAs material system necessary for this wavelength range. The following stages of the growth process have been investigated with the intention to reach maximum output power and high temperature stability: distributed Bragg reflector (DBR) doping, interface grading, number of p:DBR pairs, oxide confinement layer, cavity design, number of quantum wells, and wavelength alignment. After optimisation devices with record high output powers of more than 4 mW at 650 nm and 10 mW at 670 nm could be fabricated. Single mode VCSELs show laser emission up to 65 °C at 650 nm and 87 °C at 670 nm. Laser operation for more than 1000 h demonstrates the potential of these devices for industrial applications.

Keywords:
A3. Metalorganic vapor phase epitaxy; B2. AlGaAs; B2. AlInGaP; B2. Semiconducting III-V materials; B3. Laser diodes; B3. Vertical cavity surface emitting laser

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