Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs-nanostructures
U. Zeimer1 , J. Grenzer2, S. Grigorian2, J. Fricke1, S. Gramlich1, F. Bugge1, U. Pietsch2, M. Weyers1, and G. Tränkle1
Published in:
phys. stat. sol. (a) 195, No. 1, 178-182 (2003).
Abstract:
Lateral patterning of a tensily strained InGaP stressor layer is used to induce a lateral carrier confinement in an InGaAs-single quantum well (SQW) by lateral strain modulation. It is shown that the value of the induced strain can be influenced by the geometry of the patterned structure. Finite element calculations (FEM) of the strain distribution predict a maximum value of strain for a nearly triangular structure, whereas the strain variation decreases with the valley width of a trapezoidal structure. Samples with different stressor geometry were prepared by holographic photolithography and subsequent wet chemical etching. The optical properties were studied by 10 K photoluminescence (PL). The largest wavelength shift was observed for the sample with the triangular structure confirming the predictions of FEM calculations.
1Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
2Institut für Physik, Universität Potsdam, Am Neuen Palais 10, D-14415 Potsdam, Germany
© 2003 Wiley-VCH Verlag GmbH. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Wiley-VCH Verlag GmbH.
Full version in pdf-format.