Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors
T. Bergundea , B. Henningerb, M. Lünenbürgerc, M. Heukenc, M. Weyersa, J.-T. Zettlerb
Published in:
Journal of Crystal Growth 248 (2003) 235-239.
Abstract:
A procedure and set-up for high-precision determination of the true surface temperature of wafers during growth by metalorganic vapour phase epitaxy is described. The reflectance of the surface measured by an EpiRAS ® sensor is used for correcting the signal of a pyrometer for changes in emissivity. This allows for determination of the true surface temperature with a precision of ± 1 °C even for multilayer structures. This high precision allows to determine differences in the temperature of wafers of different size or rotating at different speed in an Aixtron Planetary Reactor ®.
aFerdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
bLayTec GmbH, Helmholtzstr. 13-14, D-10587 Berlin, Germany
cAixtron AG Aachen, Kackertstr. 15-17, D-52072 Aachen, Germany
Keywords:
A1. Characterization; A1. Heat transfer; A3. Metalorganic vapour phase epitaxy; B2. Semiconducting III-V materials
© 1999-2003, Elsevier Science B.V.. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Elsevier Science B.V.
Full version in pdf-format.