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Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions

A. Knauera , P. Krispinb, V.R. Balakrishnanb, M. Weyersa

Published in:

Journal of Crystal Growth 248 (2003) 364-368.

Abstract:

The mechanisms for formation of interlayers at the interface of GaAs on (In,Ga)P and In0.15Ga0.85As0.7P0.3 grown by metalorganic vapor phase epitaxy have been studied by capacitance-voltage profiling of the electron concentration. Shallow In-rich quantum wells (QWs) are formed in (In,Ga)P during growth interruptions under PH3 stabilization. These QWs are seen in C-V profiles, but not in photoluminescence and X-ray diffraction. Stabilization of (In,Ga)P under AsH3 yields thin ( 1-2 nm thick ) (In,Ga)(As,P) interlayers, which are observed by X-ray diffraction and capacitance-voltage profiles. Under optimized conditions, these interlayers exhibit negligibly small band offsets. When growing GaAs on quaternary (In,Ga)(As,P), interlayers can be avoided even at high growth temperatures and long growth interruptions. Independent on the chosen growth conditions, the (In,Ga)P and (In,Ga)(As,P) layers as well as the investigated interfaces are practically free of defect levels as determined by deep-level transient Fourier spectroscopy.

a Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
b Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

Keywords:
A1. Characterization; A1. Interfaces; A3. Low press, metalorganic vapor phase epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting indium gallium phosphide; B2. Semiconducting quaternary alloys

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