F. Bugge , M. Zorn, U. Zeimer, T. Sharma, H. Kissel, R. Hülsewede, G. Erbert, M. Weyers

Published in:

Journal of Crystal Growth 248 (2003) 354-358.

Abstract:

With the aim of realizing laser diodes in the wavelength range beyond 1100 nm on GaAs, we have studied the indium incorporation behaviour into pseudomorphic InGaAs-quantum wells with extremely high indium content grown by metalorganic vapour phase epitaxy. A wide growth temperature range between 490 °C and 770 °C as well as the dependence on V/III-ratio and strain compensation has been studied. At the maximum In-content of 41%, a photoluminescence wavelength of 1238 nm at room temperature is obtained. Laser diodes with an emission wavelength up to 1206 nm were processed. Structures with a slightly reduced In-content, emitting at 1120 nm, were processed to broad-area devices ( 100 µm x 1000 µm ) and show output powers up to 12 W, which corresponds to a record high internal power density of 23 MW/cm², with a good reliability. LOC structures with a reduced far field below 30° and a higher indium content emit 8.5 W at 1170 nm.

Keywords:
A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. InGaAs; B3. Laser diodes

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