Hidden resonant excitation of photoluminescence in bilayer arrays of InAs/GaAs quantum dots
Yu.I. Mazur1, Z.M. Wang1, G.J. Salamo1, M. Xiao1, G.G. Tarasov2, Z.Ya. Zhuchenko2, W.T. Masselink2, H. Kissel3
Published in:
Appl. Phys. Lett. 83 (9), 1866-1868 (2003).
Abstract:
Photoluminescence (PL) of self-organized quantum dots (QDs) in bilayer InAs/GaAs structures is studied with a fixed seed layer and spacer, but variable second-layer coverage. Careful line shape analysis reveals modulation in the high-energy tail of the seed-layer PL spectrum. The oscillation-like behavior is reproducible with variations in both the temperature and optical excitation energy. These oscillations are attributed to carrier relaxation through inelastic phonon scattering from the wetting layer to the QD excited states.
1 Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701
2 Institut für Physik, Humboldt-Universität zu Berlin, Invalidenstrasse 110, D-10115 Berlin, Germany
3 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
© 2003 American Institute of Physics. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the American Institute of Physics.
Full version in pdf-format.