G. Erbert, G. Beister, A. Knauer, J. Maege, W. Pittroff, P. Ressel, J. Sebastian, R. Staske, H. Wenzel, M. Weyers, and G. Tränkle

Published in:

Proc. SPIE, vol. 3945, pp. 301-307 (2000).

Abstract:

We report device properties and results of lifetime tests for Al-free InGaAs/InGaAsP/InGaP broad-area (BA) laser diodes, emitting at 950 nm. The epitaxial layers were grown by metal organic vapor phase epitaxy (MOVPE). The mounted diode lasers have a high wallplug efficiency around 60%, for a resonator length of 2mm, and about 50% for 4mm long devices due to low threshold current densities of j_th=110...140A/cm², high slope efficiencies of 75% and the typical low series resistance of Al-free material. The lasers were mounted on copper heatsinks, episide-down as well as episide-up. Lifetime tests were performed with a facet load of 15mW/µm at temperatures between 25°C and 70°C and with a facet load of 20mW/µm at 25°C. All diodes survived 3000h with degradation rates lower than 6x10^-5h^-1 at 50°C and 1x10^-4h^-1 at 70°C as well as 2000h with a low degradation rate of 2x10^-5h^-1 at 20mW/µm. As far we know, the results belong to the best ones reported until now for Al-free BA laser diodes.

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