Influence of current spreading on the transparency current density of quantum-well lasers
H. Wenzel, G. Erbert, A. Knauer, A. Oster, K. Vogel, G. Tränkle
Published in:
Semicond. Sci. Technol., vol. 15, pp. 557-560 (2000).
Abstract:
We investigate the dependence of the threshold current of broad-area lasers on the stripe width. A comparison of differently deep-etched devices fabricated from the same wafer reveals that the stripe width dependence of the threshold current is caused by the current spreading effect. We propose a simple method to obtain a transparency current density characterizing a particular epitaxial structure without being influenced by current spreading.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
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