Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Digitale Doherty-Sendeverstärker für die mobile Infrastruktur des SDR der Zukunft
/forschung/forschungsnews/digitale-doherty-sendeverstaerker-fuer-die-mobile-infrastruktur-des-sdr-der-zukunft
Digitale Verstärkerkonzepte sind besonders attraktiv, wenn die drahtlose Infrastruktur weiter optimiert werden soll. Werden nämlich alle Signale bis zur Endstufe digital verarbeitet, vereinfacht das…
Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description
/forschung/publikationen/simulation-of-rf-power-distribution-in-a-packaged-gan-power-transistor-using-an-electro-thermal-large-signal-description
A comprehensive electro-thermal model of a packaged GaN high electron-mobility transistor (GaN-HEMT) is presented. It includes an RF large-signal description, as well as thermal coupling between the…
InP-DHBT-on-BiCMOS Technology With fT/fmax of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources
/forschung/publikationen/inp-dhbt-on-bicmos-technology-with-ftfmax-of-400350-ghz-for-heterogeneous-integrated-millimeter-wave-sources
This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly…
Local Structure and Defect Chemistry of [(SnSe)1.15]m(TaSe2) Ferecrystals - a New Type of Layered Intergrowth Compound
/forschung/publikationen/local-structure-and-defect-chemistry-of-snse115mtase2-ferecrystals-a-new-type-of-layered-intergrowth-compound
The atomic structure of the family of ferecrystals [(SnSe)1.15]m(TaSe2) (m = 1, 3, and 6) was investigated by means of transmission electron microscopy. The tantalum in the TaSe2…
Ohmic Contacts on N-Face n-Type GaN After Low Temperature Annealing
/forschung/publikationen/ohmic-contacts-on-n-face-n-type-gan-after-low-temperature-annealing
The electrical properties of different metal systems for ohmic contacts on the nitrogen-face of c-plane n-type GaN substrates are investigated. The metal contacts are compatible with the fabrication…
Laser cooling of beryllium ions using a frequency-doubled 626 nm diode laser
/forschung/publikationen/laser-cooling-of-beryllium-ions-using-a-frequency-doubled-626nbspnm-diode-laser
We demonstrate laser cooling of trapped beryllium ions at 313 nm using a frequency-doubled extended cavity diode laser operated at 626 nm, obtained by cooling a ridge waveguide diode laser…
A State of the Art Diode Laser System for Matter Wave Interferometry in Microgravity
/forschung/publikationen/a-state-of-the-art-diode-laser-system-for-matter-wave-interferometry-in-microgravity
Future projects for fundamental research with atom interferometry in space demand for compact and robust laser systems. We present highly integrated diode laser based systems for high precision…
200 GHz Interconnects for InP-on-BiCMOS Integration
/forschung/publikationen/200-ghz-interconnects-for-inp-on-bicmos-integration
In order to combine the advantages of both InP-HBT and SiGe-BiCMOS technology, a 3D integration approach has been developed based on the transferred-substrate concept with BCB wafer bonding. Using…
RF-Power GaN Transistors with Tunable BST Pre-Matching
/forschung/publikationen/rf-power-gan-transistors-with-tunable-bst-pre-matching
A thick-film Barium-Strontium-Titanate (BST) varactor is evaluated as gate pre-matching element for integration in discrete RF-power GaN-HEMTs. The tunable prematching is connected to the gate of a…
Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors
/forschung/publikationen/bulk-and-interface-trapping-in-the-gate-dielectric-of-gan-based-metal-oxide-semiconductor-high-electron-mobility-transistors
The trapping phenomena in GaN metal-oxide-semiconductor high-electron mobility transistor structures with 10 and 20-nm thick Al2O3 gate dielectric grown by metal-organic chemical vapor deposition…