Controlled coalescence of MOVPE grown AlN during lateral overgrowth
V. Kuellera, A. Knauera, U. Zeimera, M. Kneissla,b, M. Weyersa
Published in:
J. Cryst. Growth, vol. 368, pp. 83-86 (2013).
Abstract:
The substrate miscut orientation of c-plane sapphire has an impact on the lateral growth and coalescence of AlN during epitaxial lateral overgrowth of patterned AlN/sapphire templates. A faster and more homogeneous coalescence was observed for substrates with a miscut orientation of 0.25° toward the m-direction compared to 0.25° toward the a-direction of the sapphire. A reduction of V/III ratio during overgrowth leads to an increase of lateral growth rate and therefore to a faster coalescence. The layer thickness at coalescence was clearly determined by in-situ reflectance measurements during the overgrowth. The coalescence can be controlled by carefully choosing the parameters influencing lateral growth like substrate miscut, process temperature and V/III ratio.
a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
b Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
Keywords:
A1. In-situ characterization; A1. Substrate miscut; A3. Metalorganic vapor phase epitaxy; A3. Pendeoepitaxy; A3. V/III ratio; B1. Nitrides.
© 2013 Elsevier B.V. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Elsevier B.V.
Full version in pdf-format.