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Optimization of GaN wafer bow grown on cone shaped patterned sapphire substrates
/forschung/publikationen/optimization-of-gan-wafer-bow-grown-on-cone-shaped-patterned-sapphire-substrates
Strain evolution in GaN layers grown on flat (FSS) and cone shaped patterned sapphire substrates (CPSS) is studied by in-situ reflectance and curvature measurements. Intrinsic growth strain and…
Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications
/forschung/publikationen/highly-reliable-silicon-carbide-photodiodes-for-visible-blind-ultraviolet-detector-applications
Highly efficient polytype 4H silicon carbide (4H-SiC) p−n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up…
How does external feedback cause AlGaAs-based diode lasers to degrade?
/forschung/publikationen/how-does-external-feedback-cause-algaas-based-diode-lasers-to-degrade
The effect of external feedback on the degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is studied. For this purpose, early stages of gradual degradation are…
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays
/forschung/publikationen/effective-thermal-management-in-ultraviolet-light-emitting-diodes-with-micro-led-arrays
We report on the use of micro-LED arrays, consisting of a matrix of interconnected micrometer-size light-emitting diodes (LEDs), to ensure uniform current injection, reduced series resistance, and…
Thermal Coupling in AlGaN/GaN Power Transistors
/forschung/publikationen/thermal-coupling-in-algangan-power-transistors
Thermal coupling in AlGaN/GaN transistors is investigated by means of thermal FEM (finite element method) simulation. The results are combined with electrical network simulation using an…
17-W Near-Diffraction-Limited 970-nm Output From a Tapered Semiconductor Optical Amplifier
/forschung/publikationen/17-w-near-diffraction-limited-970-nm-output-from-a-tapered-semiconductor-optical-amplifier
High power, high beam quality and narrow, stable spectra are achieved simultaneously using a truncated-tapered optical amplifier in a master-oscillator power amplifier-system. We compare the…
Fine-tuning of whispering gallery modes in on-chip silica microdisk resonators within a full spectral range
/forschung/publikationen/fine-tuning-of-whispering-gallery-modes-in-on-chip-silica-microdisk-resonators-within-a-full-spectral-range
We investigate an efficient method for fine-tuning whispering gallery mode resonances in disk-type silica microresonators to reach an arbitrary frequency within the free spectral range of the system.…
Low-cost eWLB packaging for automotive radar MMICs in the 76-81 GHz range
/forschung/publikationen/low-cost-ewlb-packaging-for-automotive-radar-mmics-in-the-76-81-ghz-range
Embedded wafer-level ball grid array (eWLB) is investigated as a low-cost plastic package for automotive radar applications in the 76-81 GHz range. Low transmission losses from chip to package and…
Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization
/forschung/publikationen/y-branch-coupled-dfb-lasers-based-on-high-order-bragg-gratings-for-wavelength-stabilization
Y-branch coupled distributed-feedback lasers with 40th- and 80th-order surface Bragg gratings have been fabricated using a process based on I-line wafer stepper lithography. The devices allow dual…
Fast GaN based Schottky diodes on Si(111) substrate with low onset voltage and strong reverse blocking
/forschung/publikationen/fast-gan-based-schottky-diodes-on-si111-substrate-with-low-onset-voltage-and-strong-reverse-blocking
GaN-based heterostructure lateral Schottky barrier diodes (SBD) grown on Si(111) substrate are presented in this work. These SBDs own very low onset-voltage, VF = 0.50 V, high reverse…