How does external feedback cause AlGaAs-based diode lasers to degrade?
M. Hempel1, M. Chi2, P.M. Petersen2, U. Zeimer3, and J.W. Tomm1
Published in:
Appl. Phys. Lett., vol. 102, no. 023502 (2013).
Abstract:
The effect of external feedback on the degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is studied. For this purpose, early stages of gradual degradation are induced by accelerated aging at high power levels. While the quantum well that actually experiences the highest total optical load remains unaffected, severe impact by point defects is observed on the cladding layers and the waveguide. Extended defects such as dislocations, however, are not observed in such early stages of degradation, which are accompanied by gradual power loss of a few percent only.
1 Max-Born-Institut, Max-Born-Str. 2 A, 12489 Berlin, Germany
2 DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Frederiksborgvej 399, P.O. Box 49, DK-4000 Roskilde, Denmark
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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