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Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers
/forschung/publikationen/waveguide-optimization-for-semipolar-inalgan-lasers
In this work the optical waveguiding in semipolar InGaN-based laser diodes is analyzed. Different designs of the separate confinement heterostructure with AlGaN or GaN cladding layers and GaN or…
Quantum Efficiency Analysis of Near-Ultraviolet Emitting AlGaN and AlInGaN Structures
/forschung/publikationen/quantum-efficiency-analysis-of-near-ultraviolet-emitting-algan-and-alingan-structures
The quantum efficiency of c-plane AlxGa1-xN and AlxInyGa1-x-yN structures (x = 0.06-0.21, y = 0.015-0.05) emitting in the UV spectral range between 320 and 350nm was analyzed…
GaN-HEMTs devices with Single- and Double-heterostructure for power switching applications
/forschung/publikationen/gan-hemts-devices-with-single-and-double-heterostructure-for-power-switching-applications
We report on an extensive study of single- (SH) and double-heterostructure (DH) HEMTs based on gallium nitride, for power switching applications. The analysis is based on dc, pulsed and breakdown…
Miniaturized diode laser based light sources for in-situ shifted excitation Raman difference spectroscopy
/forschung/publikationen/miniaturized-diode-laser-based-light-sources-for-in-situ-shifted-excitation-raman-difference-spectroscopy
Weak Raman bands are often covered by pronounced background signals due to fluorescence or Rayleigh scattering. Several techniques to separate Raman lines from the background are known. In this…
Monolithic Y-branch dual-wavelength DBR diode laser at 671 nm for Shifted Excitation Raman Difference Spectroscopy
/forschung/publikationen/monolithic-y-branch-dual-wavelength-dbr-diode-laser-at-671-nm-for-shifted-excitation-raman-difference-spectroscopy
A dual-wavelength laser diode source suitable for shifted excitation Raman difference spectroscopy (SERDS) is presented. This monolithic device contains two ridge waveguide (RW) sections with…
Single Image Spectral Electroluminescence (Photon Emission) of GaN HEMTs
/forschung/publikationen/single-image-spectral-electroluminescence-photon-emission-of-gan-hemts
Continuous spectra of GaN HEMT photon emission were detected with prism-based optical path. Full spectra are obtained with single emission images by expansion of the emission spot to a spectral tail.…
Technological approaches towards high voltage, fast switching GaN power transistors
/forschung/publikationen/technological-approaches-towards-high-voltage-fast-switching-gan-power-transistors
Approaches towards fast switching GaN devices for applications in power electronics are discussed. First, an overview on the most prominent techniques towards increased breakdown voltage will be…
An inductively coupled miniature plasma jet source at microwave frequencies
/forschung/publikationen/an-inductively-coupled-miniature-plasma-jet-source-at-microwave-frequencies
A miniature double plasma jet source driven at microwave frequencies (∼2.45 GHz) was developed and analyzed. The source consists of a copper resonator (screened within an aluminum housing) that…
Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal-Semiconductor-Metal Photodetectors
/forschung/publikationen/influence-of-carrier-lifetime-transit-time-and-operation-voltages-on-the-photoresponse-of-visible-blind-algan-metal-semiconductor-metal-photodetectors
We investigated the influence of lifetime and transit time of photogenerated carriers on the performance of visible-blind Al0.25Ga0.75N metal-semiconductor-metal photodetectors by a combination of…
High quality AlGaN grown on ELOAlN/sapphire templates
/forschung/publikationen/high-quality-algan-grown-on-elo-alnsapphire-templates
The defect structure and the homogeneity of 1-3 µm thick AlxGa1-xN layers grown on epitaxially laterally overgrown (ELO) AlN on patterned AlN/sapphire templates have been investigated in…