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Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal-Semiconductor-Metal Photodetectors
/forschung/publikationen/influence-of-carrier-lifetime-transit-time-and-operation-voltages-on-the-photoresponse-of-visible-blind-algan-metal-semiconductor-metal-photodetectors
We investigated the influence of lifetime and transit time of photogenerated carriers on the performance of visible-blind Al0.25Ga0.75N metal-semiconductor-metal photodetectors by a combination of…
High quality AlGaN grown on ELOAlN/sapphire templates
/forschung/publikationen/high-quality-algan-grown-on-elo-alnsapphire-templates
The defect structure and the homogeneity of 1-3 µm thick AlxGa1-xN layers grown on epitaxially laterally overgrown (ELO) AlN on patterned AlN/sapphire templates have been investigated in…
Improving Raman spectroscopy with miniaturized diode lasers
/forschung/publikationen/improving-raman-spectroscopy-with-miniaturized-diode-lasers
Portable, microbench light sources based on diode lasers emitting at two wavelengths improve the ratio of signal-to-background noise for chemical analysis without wavelength calibration.
Dual-wavelength monolithic Y-branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy
/forschung/publikationen/dual-wavelength-monolithic-y-branch-distributed-bragg-reflection-diode-laser-at-671-nm-suitable-for-shifted-excitation-raman-difference-spectroscopy
A dual-wavelength monolithic Y-branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one-step epitaxy. A…
Stress evolution during AlxGa1-xN/AlN growth on sapphire
/forschung/publikationen/stress-evolution-during-alxga1-xnaln-growth-on-sapphire
In-situ curvature measurements were employed to analyse stress generation and relaxation during epitaxial growth of undoped and Si-doped AlGaN layers on AlN/sapphire templates. While AlGaN films with…
Basic Aspects of High-Power Semiconductor Laser Simulation
/forschung/publikationen/basic-aspects-of-high-power-semiconductor-laser-simulation
The aim of this paper is to review some of the models and solution techniques used in the simulation of high-power semiconductor lasers and to address open questions. We discuss some of the…
Efficient High-Power Laser Diodes
/forschung/publikationen/efficient-high-power-laser-diodes
High-power broad-area diode lasers are the most efficient light sources, with 90-µm stripe GaAs-based 940-980 nm single emitters delivering > 10 W optical output at a power…
BCB encapsulation for high power AlGaN/GaN-HFET technology
/forschung/publikationen/bcb-encapsulation-for-high-power-algangan-hfet-technology
GaN-HEMT technology with BCB encapsulation was successfully established without compromises in DC and RF performance. It was shown that same power levels of 6 W/mm and high efficiencies higher…
Formation of Slanted Gates for GaN-Based HEMTs by Combined Plasma and Wet Chemical Etching of Silicon Nitride
/forschung/publikationen/formation-of-slanted-gates-for-gan-based-hemts-by-combined-plasma-and-wet-chemical-etching-of-silicon-nitride
We propose a new method for the formation of slanted gates for GaN-based HEMTS that consists of the combination of an anisotropic plasma and an isotropic wet chemical etch step. By combining these…
Fabrication technology of GaN/AlGaN HEMT slanted sidewall gates using thermally reflowed ZEP resist and CHF3/SF6 plasma etching
/forschung/publikationen/fabrication-technology-of-ganalgan-hemt-slanted-sidewall-gates-using-thermally-reflowed-zep-resist-and-chf3sf6-plasma-etching
In this work we present a technology of slanted sidewall gate fabrication using ICP etching of the SiNx passivation layer with a thermally reflowed ZEP 520A electron beam resist as etch mask. The…