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Laser cooling of beryllium ions using a frequency-doubled 626 nm diode laser
/forschung/publikationen/laser-cooling-of-beryllium-ions-using-a-frequency-doubled-626nbspnm-diode-laser
We demonstrate laser cooling of trapped beryllium ions at 313 nm using a frequency-doubled extended cavity diode laser operated at 626 nm, obtained by cooling a ridge waveguide diode laser…
A State of the Art Diode Laser System for Matter Wave Interferometry in Microgravity
/forschung/publikationen/a-state-of-the-art-diode-laser-system-for-matter-wave-interferometry-in-microgravity
Future projects for fundamental research with atom interferometry in space demand for compact and robust laser systems. We present highly integrated diode laser based systems for high precision…
200 GHz Interconnects for InP-on-BiCMOS Integration
/forschung/publikationen/200-ghz-interconnects-for-inp-on-bicmos-integration
In order to combine the advantages of both InP-HBT and SiGe-BiCMOS technology, a 3D integration approach has been developed based on the transferred-substrate concept with BCB wafer bonding. Using…
RF-Power GaN Transistors with Tunable BST Pre-Matching
/forschung/publikationen/rf-power-gan-transistors-with-tunable-bst-pre-matching
A thick-film Barium-Strontium-Titanate (BST) varactor is evaluated as gate pre-matching element for integration in discrete RF-power GaN-HEMTs. The tunable prematching is connected to the gate of a…
Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors
/forschung/publikationen/bulk-and-interface-trapping-in-the-gate-dielectric-of-gan-based-metal-oxide-semiconductor-high-electron-mobility-transistors
The trapping phenomena in GaN metal-oxide-semiconductor high-electron mobility transistor structures with 10 and 20-nm thick Al2O3 gate dielectric grown by metal-organic chemical vapor deposition…
High-power, red-emitting DBR-TPL for possible 3d holographic or volumetric displays
/forschung/publikationen/high-power-red-emitting-dbr-tpl-for-possible-3d-holographic-or-volumetric-displays
To create holographic or volumetric displays, it is highly desirable to move from conventional imaging projection displays, where the light is filtered from a constant source towards flying spot,…
Dynamics of high power gain switched DFB RW laser under high current pulse excitation on a nanosecond time scale
/forschung/publikationen/dynamics-of-high-power-gain-switched-dfb-rw-laser-under-high-current-pulse-excitation-on-a-nanosecond-time-scale
In this paper we present detailed experimental results of the impact of the amplitude and the widths of current pulses injected into a gain-switched distributed feedback (DFB) laser emitting at a…
1120 nm highly brilliant laser sources for SHG-modules in bio-analytics and spectroscopy
/forschung/publikationen/1120-nm-highly-brilliant-laser-sources-for-shg-modules-in-bio-analytics-and-spectroscopy
Highly brilliant diode lasers at 1120nm with a high optical output power, nearly diffraction limited beam and narrow spectral line width are increasingly important for non-linear frequency conversion…
654 nm broad area lasers for QCW operation with a maximal facet load of 76 mW/µm
/forschung/publikationen/654-nm-broad-area-lasers-for-qcw-operation-with-a-maximal-facet-load-of-76-mwum
Compared to diode lasers emitting in the near infrared, the development of high power diode lasers in the red spectral range is more challenging due to the applicable compound semiconductors, the…
Sub-MHz linewidth of 633 nm diode lasers with internal surface DBR gratings
/forschung/publikationen/sub-mhz-linewidth-of-633-nm-diode-lasers-with-internal-surface-dbr-gratings
Red-emitting diode lasers having a large coherence length with a tunable wavelength and a narrow spectral linewidth with an emission power in the 10 mW range are sought for a variety of…